Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Matthew R MacDonald

Xinjian Lei

Manchao Xiao

Meiliang Wang

Richard Ho

Haripin Chandra

Mark Leonard O'Neill

Moo-Sung Kim

Anupama Mallikarjunan

Se-Won Lee

Suresh Kalpatu Rajaraman

Madhukar Bhaskara Rao

Daniel P Spence

Jianheng Li

Kirk Scott Cuthill

John Francis Lehmann

Mark Leonard O'neill

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films

Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films

Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formula C: as defined herein.

Trisilylamine derivatives as precursors for high growth rate silicon-containing films

A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with RSi(NRR)wherein Rare the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20&#xb0; C. to 300&#xb0; C.

Deposition of carbon doped silicon oxide

In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

Organoamino-polysiloxanes for deposition of silicon-containing films

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

Compositions and methods for the deposition of silicon oxide films

In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:  In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350&#xb0; C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Growing community of inventors

Laguna Niguel, CA, United States of America

Matthew R MacDonald