Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Matthew R Gadinski

George C Jacob

Mohammad T Islam

Mauricio E Guzman

Joseph K So

Nan-Rong Chiou

Nestor A Vasquez

Youngrae Park

Yi Guo

Guanhua Hou

Michael E Mills

Gregory Scott Blackman

Lei Zhang

A polishing pad suitable for chemical mechanical polishing comprising: a polishing layer having a top surface having a groove pattern, the groove pattern comprises a plurality of first grooves having a first groove cross-section, the plurality of first grooves defining a plurality of regions between adjacent first grooves; and, in a portion of the plurality of region between adjacent first grooves, a plurality of second grooves having a second groove cross-section, wherein the second groove cross-section is less than 50 percent of the first groove cross-section, wherein the polishing layer is further characterized by having a specific gravity of at least 1.05 grams per cubic centimeter.

Chemical mechanical polishing pad with fluorinated polymer and multimodal groove pattern

The polishing pad is useful in chemical mechanical polishing. The polishing pad includes a polishing portion having a top polishing surface and a polishing material. There is an opening through the polishing pad and a transparent window within the opening. The transparent window is secured to the polishing pad. The window includes a polyurethane composition formed by reacting, in the presence of a hard segment inhibitor for reducing size of hard segment domains, a polymeric polyol, a polyisocyanate and a curing agent. The curing agent includes three or more hydroxyl groups forming hard segments and the polyurethane composition is an amorphous mixture of hard segments in a soft segments matrix and is free of carbon-carbon double bonds.

CMP polishing pad with window having transparency at low wavelengths and material useful in such window

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

Heterogeneous fluoropolymer mixture polishing pad

The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 &#x3bc;m rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

Cationic fluoropolymer composite polishing pad

The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 &#x3bc;m to 10 &#x3bc;m size range.

Low-debris fluopolymer composite CMP polishing pad

A polishing pad useful in chemical mechanical polishing comprising a polishing portion having a top polishing surface and comprising a polishing material an opening through the polishing pad, and a transparent window within the opening in the polishing pad, the transparent window being secured to the polishing pad and being transparent to at least one of magnetic and optical signals, the transparent window having a thickness and a top surface having a plurality of elements separated by interconnected recesses to provide a pattern in the top surface that includes recesses for improved deflection into a cavity in the polishing pad during polishing.

CMP polishing pad with uniform window

The invention provides a method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The method includes attaching a polymer-polymer composite polishing pad having a polishing layer to a polishing device. A hydrophilic polymeric matrix forms the polishing layer. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. A slurry containing anionic particles is applied to the polymer-polymer composite polishing pad and rubbed against the substrate to polish or planarize the substrate with the fluoropolymer particles interacting with the anionic particles to increase polishing removal rate.

Cationic fluoropolymer composite polishing method

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Compressible non-reticulated polyurea polishing pad

The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

Fluopolymer composite CMP polishing method

The invention provides a polishing pad suitable for polishing integrated circuit wafers. It includes an upper polishing layer that having a polishing surface and at least one groove in the upper polishing layer. At least one transparent window is located within the upper layer. The at least one transparent window has a thickness greater than a desired wear depth of the at least one groove. The at least one transparent window includes a non-fluorescent transparent polymer; and a fluorescent transparent polymer. The transparent window allows measuring groove depth by activating the fluorescent transparent polymer with an activation source at a wavelength sufficient to excite the fluorescent transparent polymer and allow endpoint detection by sending light through the fluorescent transparent polymer and the non-fluorescent transparent polymer.

Polishing pad with multipurpose composite window

The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 &#x3bc;m to polish or planarize the substrate.

Thin film fluoropolymer composite CMP polishing method

The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

Polishing pad with pad wear indicator

The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.

Chemical mechanical polishing pad and polishing method

The present invention provides chemical mechanical (CMP) polishing pads for polishing a substrate chosen from a semiconductor substrate comprising the CMP polishing pad and having one or more endpoint detection windows which is the cured product of a reaction mixture of a linear cycloaliphatic urethane macromonomer having two (meth)acrylate endgroups bound via cycloaliphatic dicarbamate esters to a polyether, polycarbonate or polyester chain having an average molecular weight of from 450 to 2,000, or an cycloaliphatic urethane oligomer thereof, and an aliphatic initiator, wherein the total isocyanate content in the urethane macromonomer ranges from 3.3 to 10 wt. %, and, further wherein, the composition comprises less than 5 wt. % of unreacted (meth)acrylate monomer and is substantially free of unreacted isocyanate. Regardless of their hardness or lack thereof, the endpoint detection windows provide excellent durability when wet.

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Newark, DE, United States of America

Matthew R Gadinski