Gatan, Inc.

Kla-tencor Technologies Corporation

Kla Tencor Corporation

Matthew Lent

Alexander Jozef Gubbens

Kenneth Krzeczowski

Niles MacDonald

Mehran Naser-Ghodsi

Chris Huang

Sergey D Lopatin

Rudy Flores Garcia

Ming Lun Yu

Paul E Mooney

Colin Trevor

Edward Michael James

Garrett Pickard

Ray Dudley Twesten

Stanislaw Marek Borowicz

Tzu-Chin Chuang

Thomas Sha

Roice Joseph

SanJay Parekh

Mehran Nasser-Ghodsi

Amir Azordegan

Hedong Yang

Ye Yang

Paul Edward Mooney

David Joyce

Julio Kovacs

Sanjay Parekh

A solid state active pixel image sensor for back illumination by an electron beam is described. The image sensor comprises a thermal conduction layer for heat removal. The image sensor may also comprise a thinned silicon substrate on which an epitaxial layer is formed. The substrate may also be completely removed before or after application of the thermal conduction layer. The thermal conduction layer may comprise a metal, a metal compound, silicon, diamond or graphite.

Electronic imaging detector with thermal conduction layer

An electron energy loss spectrometer is described having a direct detection sensor, a high speed shutter and a sensor processor wherein the sensor processor combines images from individual sensor read-outs and converts a two dimensional image from said sensor into a one dimensional spectrum and wherein the one dimensional spectrum is output to a computer and operation of the high speed shutter is integrated with timing of imaging the sensor. The shutter is controlled to allow reduction in exposure of images corresponding to the individual sensor readouts. A plurality of images are exposed by imaging less than the full possible exposure and wherein the plurality of images are combined to form a composite image. The plurality of images can be comprised of images created by exposing the sensor for different exposure times.

Electron energy loss spectrometer using direct detection sensor

A hybrid arrangement of more than one electron energy conversion mechanism in an electron detector is arranged such that an image can be acquired from both energy converters so that selected high-illumination parts of the electron beam can be imaged with an indirectly coupled scintillator detector and the remainder of the image acquired with the highsensitivity/direct electron portion of the detector without readjustments in the beam position or mechanical positioning of the detector parts. Further, a mechanism is described to allow dynamically switchable or simultaneous linear and counted signal processing from each pixel on the detector so that high-illumination areas can be acquired linearly without severe dose rate limitation of counting and lowillumination regions can be acquired with counting.

Hybrid energy conversion and processing detector

There is disclosed a hybrid arrangement of more than one electron energy conversion mechanism in a detector arranged physically such that the electron image can be acquired from both energy converters in such a manner that selected high-illumination parts of the image can be imaged with an indirectly coupled scintillator detector and the remainder of the image acquired with the high-sensitivity/direct electron portion of the detector without readjustments in the beam position or mechanical positioning of the detector parts. Further, a mechanism to allow dynamically switchable or simultaneous linear and counted signal processing from each pixel of the image so that high-illumination areas can be acquired linearly without the severe dose rate limitation of counting and low-illumination regions can be acquired with counting, the switchover point determined by the dose rate at which signal quality breaks even between linear and counting modes.

Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Structural modification using electron beam activated chemical etch

Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Etch selectivity enhancement in electron beam activated chemical etch

A method of imaging using an electron beam. An incident electron beam is focused onto the specimen surface, a scattered electron beam is extracted from the specimen surface, and a plurality of dark field signals are detected using a detection system. An interpolated dark field signal is generated using the plurality of dark field signals. In addition, a bright field signal may be detected using the detection system, and a final interpolated signal may be generated using the interpolated dark field signal and the bright field signal. User input may be received which determines a degree of interpolation between two adjacent dark field signals so as to generate the interpolated dark field signal and which determines an amount of interpolation between the interpolated dark field signal and the bright field signal so as to generate a final interpolated signal. Other embodiments, aspects and features are also disclosed.

Apparatus and method for e-beam dark imaging with perspective control

Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

Three-dimensional imaging using electron beam activated chemical etch

One embodiment disclosed relates to a scanning electron beam apparatus. The apparatus includes an electron beam column, a scanning system, and a detection system. Circuitry in the apparatus is configured to store detected pixel data from each scan into one of the multiple frame buffers. A multi-frame data processor is configured to analyze the pixel data available in the multiple frame buffers. Another embodiment disclosed relates to a scanning electron beam apparatus having a data processor is configured to process the image data with a filter function having a filter strength, store results of the processing, and repeat the processing and the storing using various filter strengths. The results of the processing may comprise a critical dimension measurement at each filter strength.

Scanning electron beam apparatus and methods of processing data from same

A process and apparatus is disclosed capable of removably adhering a semiconductor substrate to a substrate support in a sub-atmospheric environment using a plurality of individual fibers, each mounted at one end adjacent the substrate support, and each having a loose end. When the portions of the fiber adjacent the loose fiber ends are each brought into contact with the under surface of the substrate, Van der Waals forces are exerted between the substrate and the fibers to urge the substrate toward the underlying substrate support. In a preferred embodiment, the substrate and portions of the fiber adjacent the loose fiber ends are first vertically brought into physical contact with one another, and then a horizontal force is applied to horizontally move, with respect to one another, the substrate and the portions of the fibers adjacent the loose fiber ends. After application of the horizontal force, a vertical force is applied between the substrate and the fibers of sufficient strength to urge the substrate and the fibers away from one another without breaking contact between the substrate and the portions of the fiber adjacent the fiber ends to thereby place tension on the substrate to urge the substrate to lie flat against the underlying substrate support.

Growing community of inventors

Livermore, CA, United States of America

Matthew Lent