Element Six Technologies Limited

Element Six Gmbh

Harvard College

Princeton University

University of Warwick

Element Six Abrasives S.a.

Element Six (UK) Limited

Matthew Lee Markham

Daniel James Twitchen

Andrew Mark Edmonds

Geoffrey Alan Scarsbrook

Alastair Douglas Stacey

Pierre-Olivier Francois Marc Colard

Nathalie De Leon

Hongkun Park

Gregory Scott Bruce

Mikhail D Lukin

John Robert Brandon

Christopher John Howard Wort

Marko Loncar

Wilbur Lew

Joseph Michael Dodson

Ian Friel

Mark Edward Newton

Ruffin E Evans

Amir Yacoby

Harpreet Kaur Dhillon

Jonathan James Wilman

Julie Victoria MacPherson

Steven Edward Coe

Mark Gregory Munday

Christopher Wort

Patrick Maletinsky

Joshua James Tully

Stephen A Lyon

Ronald Hanson

Brendan John Shields

Fedor Jelezko

Katharine Robertson

Brendon C Rose

Ding Huang

Zi-Huai Zhang

Sorawis Sangtawesin

Birgit Judith Maria Hausmann

Pierre-Olivier François Marc Colard

Srikanth Srinivasan

Rizwan Khan

Samuel James Cobb

Alexei M Tyryshkin

Christopher John Wort

Hannes Bernien

Yiwen Chu

David William Hardeman

Daniel Twitchen

Alastair Stacey

Ruffin Eley Evans

A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.

Methods of fabricating synthetic diamond materials using microwave plasma activated chemical vapour deposition techniques and products obtained using said methods

A device that utilises an electronic Zeeman splitting effect comprises a solid-state material that comprises at least one spin defect, a magnetic field generator configured to generate a bias magnetic field, and a compensation system to compensate for an effect of changes in temperature on the bias magnetic field. The compensation system comprises a temperature sensor configured to measure any of a temperature and a change in temperature of the magnetic field generator, and a computer device configured to determine a change in the bias magnetic field as a result of a change in the measured temperature or the measured change in temperature. The computer device is further configured to adjust a predetermined bias magnetic field value using the determined change in bias magnetic field and using the value as an input to the compensation system to compensate for the effect of changes in temperature on the bias magnetic field.

Device utilising electronic Zeeman splitting

Disclosed are synthetic diamond materials for quantum and optical applications, such as quantum information processing, quantum key distribution, quantum repeaters, and quantum sensing devices, based on spin defects in diamond. This includes methods for synthesizing and treating diamond in order to create spin defects with improved spin coherence and optical emission properties, as well as treating the diamond to eliminate unwanted defects that degrade these properties.

Synthetic engineered diamond materials with spin impurities and methods of making the same

A method for forming a diamond product. Diamond material is provided and a damage layer comprising spbonded carbon is formed in the material. The presence of the damage layer defines a first diamond layer above and in contact with the damage layer and a second diamond layer below and in contact with the damage layer. The damage layer is electrochemically etched to separate it from the first layer, wherein the electrochemical etching is performed in a solution containing ions, the solution having an electrical conductivity of at least 500 μS cm, and wherein the ions are capable of forming radicals during electrolysis. The diamond product is also described.

Method for forming diamond product

A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NVconcentration in the first single crystal diamond body.

Single crystal composite synthetic diamond material

Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, N, to total single substitutional nitrogen, N, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

Single crystal synthetic diamond material

Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen. N, to total single substitutional nitrogen, N, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.

Synthetic diamond material

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV); negatively charged nitrogen-vacancy defects (NV); and single substitutional nitrogen defects (N) which transfer their charge to the neutral nitrogen-vacancy defects (NV) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV]/[NV]), [NV] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T' is a decoherence time of the NVdefects, where T&#x2032; is T* for DC magnetometry or Tfor AC magnetometry.

Nitrogen containing single crystal diamond materials optimized for magnetometry applications

A single crystal CVD diamond component comprising: a surface, wherein at least a portion of said surface is formed of as-grown growth face single crystal CVD diamond material which has not been polished or etched and which has a surface roughness Rof no more than 100 nm; and a layer of NVdefects, said layer of NVdefects being disposed within 1 &#x3bc;m of the surface, said layer of NVdefects having a thickness of no more than 500 nm, and said layer of NVdefects having a concentration of NVdefects of at least 10NV/cm.

Diamond components for quantum imaging, sensing and information processing devices

A method of fabricating fluorescent diamond particles, and diamond particles fabricated by the method. The method comprises mounting a diamond body on a heat sink, the diamond body comprising a plurality of diamond particles having a particle size of no more than 250 micrometres and bound together in the diamond body by a binder. The diamond body is irradiated to generate vacancy defects in the diamond particles. The binder is then removed to separate the diamond body into diamond particles.

Highly fluorescent diamond particles and methods of fabricating the same

Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cmper minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area

A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

Synthetic diamond materials for quantum and optical applications and methods of making the same

A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a Tat room temperature of about 300 &#x3bc;s or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rof the single crystal diamond within an area defined by a circle of radius of about 5 &#x3bc;m centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.

Solid state material

A device for achieving multi-photon interference is provided based on nitrogen-vacancy defects in diamond material. Nitrogen-vacancy defects having a narrow band width and a similar emission frequency are identified within a high quality diamond material. The device has an excitation arrangement configured to individually address nitrogen-vacancy defects and optical outcoupling structures for increasing outcoupling of photons from each nitrogen-vacancy defect. A tuning arrangement is configured to tune the emission from each nitrogen-vacancy defect to reduce differences in frequency and the photons are overlapped. A detector is provided to detect the photon emissions. The detector is configured to resolve sufficiently small differences in photon detection times such that tuned photon emissions from the nitrogen-vacancy defects are quantum mechanically indistinguishable resulting in quantum interference between indistinguishable photon emissions from different nitrogen-vacancy defects.

Device for achieving multi-photon interference from nitrogen-vacancy defects in diamond material

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Maidenhead, United Kingdom

Matthew Lee Markham