Applied Materials, Inc.

Envertic Thermal Systems, LLC

Lam Research Corporation

Matthew James Busche

Wendell Glenn Boyd, Jr

Vijay D Parkhe

Senh Thach

Konstantin Makhratchev

Masanori Ono

Michael Robert Rice

Leon Volfovski

Anthony J Ricci

Keith William Gaff

Govinda Raj

Henry Povolny

Scott Stevenot

Juan Carlos Rocha-Alvarez

Sanjeev Baluja

Amit Kumar Bansal

Todd J Egan

Jianhua Zhou

Ajit Balakrishna

Dmitry A Dzilno

Gregory Kirk

Swaminathan T Srinivasan

Tejas Ulavi

Saurabh J Ullal

Kaushik Comandoor Alayavalli

Michael S Kang

Wendell Glen Boyd, Jr

Embodiments of the present disclosure provide a method for processing a substrate disposed on a substrate support. The method includes chucking a substrate to a substrate support, monitoring a chucking force on the substrate with a sensor disposed in a backside gas hole of the substrate support, wherein the sensor comprises a sensor assembly disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to allow gas to flow past the sensor assembly when positioned in the gas hole and flowing a gas through the backside gas hole past the sensor.

Substrate support with real time force and film stress control

Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support assembly has a puck having a workpiece support surface, a gas hole formed through the workpiece support surface, and a sensor assembly disposed in the gas hole. The substrate support assembly further has a transition conduit fluidly coupled to the gas hole, and a connection coupled to the transition conduit. The connection has a first opening fluidly coupled to the transition conduit and a second opening coupled to a control system, where the control system is coupled to the sensor assembly.

A thermal switch having an on-state and an off-state is provided. First and second plates are composed from a thermally conductive material. The first and second plates are connected to form an internal cavity having a channel defining a gap between the first and second plate. The first reservoir is coupled to the channel and contains a thermally conductive liquid. The actuator is coupled to the first reservoir and the channel and is moveable between a first state and a second state corresponding to the on-state and the off-state of the thermal switch, respectively. Thermally conductive liquid is allowed to flow from the first reservoir to the channel when the actuator is in the first state and allowed to flow from the channel to the first reservoir when the actuator is in the second state.

Thermal switch

Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to provide the benefit of allowing gas to flow past the sensor assembly when positioned in the gas hole.

Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

Heater pedestal assembly for wide range temperature control

A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.

Edge seal configurations for a lower electrode assembly

Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to allow gas to flow past the sensor assembly when positioned in the gas hole.

Substrate temperature control apparatus and electronic device manufacturing systems provide pixelated light-based heating to a substrate in a process chamber. A substrate holder in the process chamber may include a baseplate. The baseplate has a top surface that may have a plurality of cavities and a plurality of grooves connected to the cavities. Optical fibers may be received in the grooves such that each cavity has a respective optical fiber terminating therein to transfer light thereto. Some or all of the cavities may have an epoxy optical diffuser disposed therein to diffuse light provided by the optical fiber. A ceramic plate upon which a substrate may be placed may be bonded to the baseplate. A thermal spreader plate may optionally be provided between the baseplate and the ceramic plate. Methods of controlling temperature across a substrate holder in an electronic device manufacturing system are also provided, as are other aspects.

Apparatus, systems, and methods for temperature control of substrates using embedded fiber optics and epoxy optical diffusers

An optical fiber temperature sensor including a lead-in fiber and black body emitter. The lead-in optical fiber includes a fiber end, and the black body emitter is fused on the fiber end, wherein the black body emitter is made up of a melted high emissivity material included integrally in melted silica. Further embodiments include temperature monitoring apparatus with one or more optical fiber temperature sensors, and electronic device processing apparatus including optical fiber temperature monitoring. Numerous other aspects and embodiments are included.

Optical fiber temperature sensors, temperature monitoring apparatus, and manufacturing methods

Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamber. A deflection force is monitored on the workpiece. A chucking voltage is applied at a minimum value. A backside gas pressure is applied at a minimum pressure. The chucking voltage and or backside gas pressure is adjusted such that the deflection force is less than a threshold value. And the chucking voltage and the backside gas pressure are simultaneously ramped up.

Real time monitoring with closed loop chucking force control

Implementations described herein provide a pixelated substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a cooling base comprising the substrate support assembly, which in turn, allows both lateral and azimuthal tuning of a substrate processed on the substrate support assembly. A processing chamber having a pixelated substrate support assembly and method for processing a substrate using a pixelated substrate support assembly are also provided.

Pixilated cooling, temperature controlled substrate support assembly

An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

Growing community of inventors

Santa Clara, CA, United States of America

Matthew James Busche