Northrop Grumman Systems Corporation

Matthew J Walker

Monica P Lilly

Wayne Stephen Miller

Andre E Berghmans

John Xavier Przybysz

Robert Samuel Howell

Patrick Bruckner Shea

James T Kelliher

William J Sweet

Melody E Grubbs

One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

Self-assembled monolayer overlying a carbon nanotube substrate

A cobalt-carbon (Co&#x2014;C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co&#x2014;C eutectic metal alloy, and creating an ohmic contact by depositing the Co&#x2014;C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co&#x2014;C eutectic metal alloy is in direct contact with the CNTs. The Co&#x2014;C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.

Carbon mixture ohmic contact for carbon nanotube transistor devices

A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

Method for growing carbon nanotubes

Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors

Growing community of inventors

Glen Burnie, MD, United States of America

Matthew J Walker