Micron Technology Incorporated

Eastman-kodak Company

Lodestar Licensing Group LLC

Matthew Holland

Darwin A Clampitt

Roger W Lindsay

Keith B Kahen

Jeffrey D Runia

Chamunda N Chamunda

Matthew J King

Yoshiaki Fukuzumi

Paolo Tessariol

Richard J Hill

Jun Fujiki

Kunal Shrotri

David A Kewley

Shuji Tanaka

Chandra S Tiwari

Yi Hu

Umberto Maria Meotto

Tom Jibu John

Xiaosong Zhang

Sidhartha Gupta

Kyle A Ritter

Michael E Koltonski

Kye Hyun Baek

Sudeep Pallikkara Kuttiatoor

Deep Panjwani

A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures. Memory cells vertically extend through the stack structure, and comprise a channel material vertically extending through the stack structure. An additional stack structure vertically overlies the stack structure and comprises additional conductive structures and additional insulative structures. First pillar structures extend through the additional stack structure and vertically overlie a portion of the memory cells. Second pillar structures are adjacent to the first pillar structures and extend through the additional stack structure and vertically overlie another portion of the memory cells. Slot structures are laterally adjacent to the first pillar structures and to the second pillar structures and extend through at least a portion of the additional stack structure. A distance between the first pillar structures and the slot structures is substantially equal to a distance between the second pillar structures and the slot structures.

Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devices

A microelectronic device comprises a stack structure, a stadium structure within the stack structure, and conductive contact structures. The stack structure comprises a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. Each of the tiers comprises one of the conductive structures and one of the insulative structures. The stadium structure comprises a forward staircase structure having steps comprising edges of the tiers, and a reverse staircase structure opposing the forward staircase structure and having additional steps comprising additional edges of the tiers. The conductive contact structures vertically extend to upper vertical boundaries of at least some of the conductive structures of the stack structure at the steps of the forward staircase structure and the additional steps of the reverse staircase structure, and are each integral and continuous with one of the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Microelectronic devices and related memory devices

Methods of forming microelectronic devices

A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically overlying the strings of memory cells, and additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars. Related microelectronic devices, electronic systems, and methods are also described.

Microelectronic devices including tiered stacks including conductive structures isolated by slot structures, and related electronic systems and methods

Microelectronic devices including stadium structures, and related methods, memory devices, and electronic systems

A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.

Method of making highly-confined semiconductor nanocrystals

A method of making II-VI core-shell semiconductor nanowires includes providing a support; depositing a layer including metal alloy nanoparticles on the support; and heating the support and growing II-VI core semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the core nanowires. The method further includes modifying the growth conditions and shelling the core nanowires to form II-VI core-shell semiconductor nanowires.

Forming II-VI core-shell semiconductor nanowires

A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.

II-VI core-shell semiconductor nanowires

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Victor, NY, United States of America

Matthew Holland