Lumentum Operations LLC

Jds Uniphase Corporation

Matthew Glenn Peters

Ajit Vijay Barve

Benjamin Kesler

Jun Yang

Guowei Zhao

Eric R Hegblom

Mohammad Ali Shirazi Hosseini Dokht

Victor Rossin

Erik Paul Zucker

Abdullah Demir

John Michael Miller

Lijun Zhu

Jay A Skidmore

Vincent V Wong

Hao Huang

Lynn Karl Wiese

Siu Kwan Cheung

Hanmin Zhao

Jo Stephen Major, Jr

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode

In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

Dilute nitride long-wavelength emitter with improved performance over temperature

A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.

Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity

A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

Methods for forming a vertical cavity surface emitting laser device

A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

Optimizing a layout of an emitter array

An optical chip may include a vertical-cavity surface-emitting laser (VCSEL) structure. The optical chip may include a capacitor over at least a portion of an active layer of the VCSEL structure that is outside of an active region of the VCSEL structure. The capacitor may include a first metal layer over the portion of the active layer, a dielectric layer on the first metal layer, and a second metal layer on the dielectric layer. The optical chip may include an isolation region between a substrate of the VCSEL and a portion of the capacitor outside of the VCSEL.

Vertical-cavity surface-emitting laser array with integrated capacitor

A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.

Multi-layer metallization for multi-channel emitter array

In some implementations, a vertical-cavity surface-emitting laser (VCSEL) array may comprise a plurality of channels, a plurality of traces, and a plurality of emitters. A channel, of the plurality of channels, may include a set of emitters, of the plurality of emitters, arranged in a row of emitters. The channel may include a trace, of the plurality of traces, that has a trace width that is tapered along a length of the trace. Numerous other aspects are provided.

Variable trace width for individual vertical cavity surface emitting laser channels for time of flight illuminators

An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

Modified emitter array

A VCSEL array may include a semiconductor substrate and a plurality of emitters on the substrate that conforms to an emitter pattern. The emitter pattern may be oriented at a non-zero angle to an edge of the substrate and may comprise two or more unit cells arranged to form the emitter pattern. Each unit cell, of the two or more unit cells, may include a same number of emitters, and the two or more unit cells may be arranged to cause a measurement of misalignment associated with two adjacent unit cells, of the two or more unit cells, to satisfy a misalignment threshold.

Vertical-cavity surface-emitting laser array with a tilted emitter pattern

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

Vertical-cavity surface-emitting laser with a tunnel junction

An emitter array may comprise a plurality of emitters and a metallization layer to electrically connect the plurality of emitters. The metallization layer may have a first end and a second end. The plurality of emitters may include a first emitter and a second emitter. The first emitter may be located closer to the first end than the second emitter. The first emitter and the second emitter have differently sized structures to compensate for a first impedance of the metallization layer between the first end and the first emitter and a second impedance between the first end and the second emitter.

Impedance compensation along a channel of emitters

A device includes a substrate, a vertical cavity surface emitting laser (VCSEL) array on top of the substrate, a via through the substrate and the VCSEL array, a first electrode extended from a top of the VCSEL array to a bottom of the substrate, through the via, the first electrode electrically connected to the VCSEL array, a second electrode on the bottom of the substrate, the second electrode electrically connected to the VCSEL array, and an isolator in the via providing electrical isolation between the first electrode and the second electrode.

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Matthew Glenn Peters