Rfmd (uk) Limited

Filtronic Plc

Filtronic Compound Semiconductor, Ltd.

Matthew Francis O'Keefe

Richard Alun Davies

Robert Grey

Michael Charles Clausen

John Melvyn Cullen

A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided.

Light emitting structure and method of manufacture thereof

A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer.

Reflecting light emitting structure and method of manufacture thereof

A heterojunction bipolar transistor comprising

Transistor

A III-V field effect transistor comprising

Compound semiconductor substrate for a field effect transistor

A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.

Field effect transistor with aluminum and phosphorus etch stop layer

A method of handling a semiconductor wafer from which a plurality of semiconductor devices are to be fabricated during a semiconductor device fabrication process. The method includes the steps of attaching a flexible connected layer to a semiconductor wafer layer mounted on a carrier substrate and separating the wafer layer from the carrier substrate while supported by the flexible connected layer.

Growing community of inventors

Aycliffe Village, United Kingdom

Matthew Francis O'Keefe