Electron Vision Corporation

Applied Materials, Inc.

Other

Filmetrics, Inc.

Alliedsignal Inc.

Matthew F Ross

William R Livesay

Heike Thompson

Jingjun Yang

Selmer Wong

Scott A Chalmers

Randall S Geels

Charles Hannes

Anthony L Rubiales

Timothy Weidman

Richard L Ross

Trey Marlowe

Mark Narcy

Carl Treadwell

A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The system includes a spatially variable filter (SVF) positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Optical instrumentation including a spatially variable filter

A system comprising a light source configured to illuminate a sample under measurement. The system includes a detector configured to receive reflected light from the sample, and the detector generates a signal representing the reflected light. A spatially variable filter (SVF) is positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Optical spectrometer configuration including spatially variable filter (SVF)

A trailer assembly for transporting recreational vehicles generally includes a base portion having a set of wheels, a holding assembly supported by the base portion and including a first support suitable for holding a first recreational vehicle and a second support adjacent the first support and suitable for holding a second recreational vehicle. The trailer assembly further includes a movement mechanism effective to move the first support and the second support from a launch position to a stow position. The launch position is a position which facilitates launching and loading of recreational vehicles with respect to the trailer assembly and the stow position is a position which is more space-saving than the launch position and facilitates loading of the full trailer assembly into a toy hauler or other limited cargo space.

Watercraft trailer system

A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Electron beam modification of CVD deposited films, forming low dielectric constant materials

One embodiment of the present invention is a photoresist formulation that includes e-beam cross-linkable substituents, which substituents include one or more of the following functional groups: (a) carbon-carbon double bonds; (b) a strained ring system; (c) a halogenated compound; and (d) one or more organo-silicon moieties.

E-beam curable resist and process for e-beam curing the resist

It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

Method for modifying resist images by electron beam exposure

An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

Method for controlling dopant profiles and dopant activation by electron beam processing

A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring lines are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.

Electron beam process during damascene processing

A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy. After imagewise exposing and developing, the image areas of the photosensitive composition are irradiated to electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20&deg; C.

Method and apparatus for modification of chemically amplified photoresist by electron beam exposure

An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

Method for curing spin-on dielectric films utilizing electron beam radiation

Electron beam modification of CVD deposited low dielectric constant materials

A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.

Electron beam annealing of metals, alloys, nitrides and silicides

A treated substrate produced by a process for treating a dielectric layer on a substrate, which comprises applying a sufficient amount of a liquid dielectric composition onto an upper surface of a semiconductor substrate to thereby form a dielectric layer on the upper surface of the substrate, the dielectric layer having a thickness of from about 2,000 to about 50,000 angstroms; heating a surface of the dielectric layer and exposing the dielectric layer to an electron beam radiation, in which the electron beam radiation is concentrated at a distance within about 1,000 angstroms from the surface of the dielectric layer, under vacuum conditions to remove substantially all moisture and/or contaminants from the surface of the dielectric layer at a depth of up to about 1,000 angstroms from the surface of the dielectric layer; and chemical vapor depositing a chemical vapor deposit material onto the surface of the treated dielectric layer while maintaining the vacuum conditions.

Method of processing films prior to chemical vapor deposition using electron beam processing

The invention pertains to dielectric films for the production of microelectronic devices. A spin-on glass film is produced by depositing a silazane polymer containing composition film onto a substrate and then exposing the film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Growing community of inventors

San Diego, CA, United States of America

Matthew F Ross