Massachusetts Institute of Technology

Matthew E Grein

Michael W Geis

Steven Jay Spector

Franz Xaver Kaertner

Theodore M Lyszczarz

Donna M Lennon

Hermann A Haus

Erich P Ippen

Leslie Kolodziejski

Fuwan Gan

Robert T Schulein

Jung U Yoon

Erik R Thoen

Yoon Jung

Elisabeth M Koontz

Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Method and apparatus for modulation using a conductive waveguide

A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

System and method for providing a high frequency response silicon photodetector

Systems and methods for enhancing the stability of a mode-locked laser's output are disclosed. The laser systems include a mode-locking element that mode-locks the laser's output, and a semiconductor element. The semiconductor element produces a loss at the laser's operative wavelength that increases as pulse energy increases, thereby enhancing the stability of the mode-locked output. The semiconductor elements can be used to enhance stability of both passively and actively mode-locked laser systems.

Semiconductor elements for stabilizing laser output

Growing community of inventors

Cambridge, MA, United States of America

Matthew E Grein