L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

American Air Liquide, Inc.

Voltaix, LLC

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Matthew Damien Stephens

Peng Zhang

Antonio Sanchez

Gennadiy Itov

Manish Khandelwal

Jean-Marc Girard

Glenn Kuchenbeiser

Zhiwen Wan

Reno Pesaresi

Guillaume Husson

Sean Kerrigan

Yang Wang

Cole Ritter

David Orban

Grigory Nikiforov

Cole J Ritter, Iii

Gennadily Itov

Jean Marc Girard

Genaadiy Itov

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X&#x2550;N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X&#x2550;N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si&#x2014;containing films.

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

N&#x2014;H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications

Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si&#x2014;H and a N&#x2014;H moiety to form an Si&#x2014;N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via de-hydrogenative coupling between the corresponding unsubstituted trisilylamines and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si&#x2014;H and a N&#x2014;H moiety to form an Si&#x2014;N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

Halogen free synthesis of aminosilanes by catalytic dehydrogenative coupling

The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

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Morristown, NJ, United States of America

Matthew Damien Stephens