Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Université Grenoble Alpes

Matthew Charles

Ivan-Christophe Robin

Hubert Bono

Julien Buckley

Guy Feuillet

Hubert Moriceau

Christophe Morales

Yohan Desieres

Rene Escoffier

Erwan Morvan

Jesus Zuniga Perez

René Escoffier

Thierry Bouchet

Alexis Bavard

Blandine Alloing

Roy Dagher

Alphonse Torres

A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.

Method for producing nitride mesas each intended to form an electronic or optoelectronic device

A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.

Method for producing a nitride layer

A device including first and second light-emitting cells respectively emitting in first and second wavelength ranges, wherein:

Multi-colour electroluminescent display device and method for manufacturing such a device

A process for manufacturing an optoelectronic device having a diode matrix with semiconductor stacks involves providing a growth substrate having a support substrate coated with a nucleation layer defining a nucleation surface. A dielectric layer is deposited on the nucleation surface. A plurality of through-holes, extending to the nucleation surface, are formed in the dielectric layer. The nucleation layer, located in the through-holes, is etched to free up an upper surface of the support surface and expose a lateral surface of the nucleation layer forming a lateral nucleation surface. A dielectric region is formed extending in the support substrate such that, during a subsequent epitaxial growth stage, each first doped portion is formed especially from the lateral nucleation surface. In the through-holes and from the nucleation surface, the semiconductor stacks are epitaxially grown such that at least the first doped portions and active zones thereof are located in the through-holes.

Process for manufacturing an optoelectronic device having a diode matrix

Semiconductor structure having a group iii-v semiconductor layer comprising a hexagonal mesh crystalline structure

A method for manufacturing a light-emitting diode is provided, including the following steps in succession, while maintaining a substrate in a vapour-phase epitaxial growth chamber: epitaxial deposition, with an atmosphere having a first non-zero concentration of ammonia in the chamber, of a first GaN alloy layer P-doped with magnesium; epitaxial deposition, on the first GaN alloy layer, of a sacrificial GaN alloy layer in a second atmosphere in the chamber that is not supplied with magnesium; placing the second atmosphere inside the chamber under conditions with a second concentration of ammonia that is at least equal to a third of the first non-zero concentration so as to remove the sacrificial GaN layer; and then epitaxial deposition of a second N-type doped GaN alloy layer so as to form a tunnel junction with the first GaN alloy layer.

Method of manufacturing of a GaN light emitting diode

A high-electron-mobility field-effect transistor includes a superposition of first and second layers of semiconductor materials so as to form an electron gas layer and includes a gate stack arranged on the superposition. The gate stack includes a conductive electrode and an element made of p-doped semiconductor material, arranged between the conductive electrode and the superposition. The gate stack includes a first dielectric layer arranged between the conductive electrode and the element made of semiconductor material. The element made of semiconductor material, the first dielectric layer, and the conductive electrode have aligned lateral flanks.

High electron mobility transistor and method of fabrication having reduced gate length and leak current

The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.

Method for producing an epitaxial layer on a growth plate

A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.

Method for making a gallium nitride light-emitting diode

The invention relates to a process for manufacturing a heterojunction electronic component provided with an embedded barrier layer, the process comprising: depositing by epitaxy, in a vapour phase epitaxial growth chamber with an atmosphere exhibiting a first nonzero ammonia concentration, of a GaN precursor layer of the embedded barrier layer, comprising a first layer doped with a Mg or Fe dopant; placing, while maintaining the substrate in the chamber, the atmosphere at a second ammonia concentration at most equal to a third of the first concentration, in order to remove an upper part of the precursor layer; and then after the removal of the said upper part, while maintaining the substrate in the chamber, depositing by epitaxy of a layer of semiconductor material of the heterojunction electronic component to be manufactured, the said precursor layer then forming the embedded barrier layer under the said layer of semiconductor material.

Method for manufacturing electronic component for heterojunction provided with buried barrier layer

An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Optoelectronic device comprising a light-emitting component and a transistor

A semiconductor structure including a substrate, a buffer layer, a superlattice formed on the buffer layer, the superlattice including a pattern including n layers made of different materials, n being at least equal to 2, each layer including an AlGaInBN type material where x+y+w+z=1, the thickness of each layer being less than the critical thickness thereof, the number of patterns being at least equal to 50, an insert layer wherein the material has a first lattice parameter, a layer of GaN material, wherein the lattice parameter is greater than the first lattice parameter such that the layer of GaN material is compressed by the insert layer.

Semiconductor structure with enhanced withstand voltage

A method for fabricating a heterojunction field-effect transistor includes implanting p-type dopants form an implanted area in a first layer of III-V semiconductor alloy, removing an upper part of the first layer and of the implanted area by maintaining vapor phase epitaxy conditions, stopping the removal when the density of the dopant at the upper face of the implanted area is maximal, forming a second layer of III-V semiconductor alloy by vapor phase epitaxy on the implanted area and on the first layer, forming a third layer of III-V semiconductor alloy by vapor phase epitaxy in order to form an electron gas layer at the interface between the third layer and the second layer, and forming a control gate on the third layer plumb with the implanted area.

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Grenoble, France

Matthew Charles