Newsouth Innovations Pty Limited

Bluevolt Solar Pty. Ltd.

Matthew Bruce Edwards

Stuart Ross Wenham

Brett Jason Hallam

Ly Mai

Alison Maree Wenham

Catherine Emily Chan

Chee Mun Chong

Pei Hsuan Lu

Phillip George Hamer

Adeline Sugianto

Lihui Song

GuangQi Xu

Li Hui Song

Guang Qi Xu

Alison Joan Lennon

Budi Santoso Tjahjono

Alison Ciesla

Catherine Chan

Pei Chieh Hsiao

Pei-Hsuan Lu

Guangqi Xu

The present disclosure is directed to an energy management system that allows leveraging DC energy at user premises. The system allows for use of local or remote DC energy generated by photovoltaic modules or a battery pack. The system comprises a premises electricity network interface arranged to deliver and draw energy to and from a premises electricity network; a premises energy measurement module arranged to measure the amount of energy required by the premises electricity network; a DC energy input arranged to receive energy from one or more DC energy sources; and an energy analytics module arranged to receive data from the energy measurement module and, based on the received data, calculate an amount of energy to be delivered to the premises electricity network via the premises electricity network interface.

Energy management system

A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.

High concentration doping in silicon

A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises:

Advanced hydrogenation of silicon solar cells

A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

Thermal processing in silicon

A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.

Solar cell metallisation and interconnection method

A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1&#xd7;10atoms/cmor less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1&#xd7;10atoms/cmor less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40&#xb0; C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm.

Growing community of inventors

Elanora Heights, Australia

Matthew Bruce Edwards