International Business Machines Corporation

Matthew Brightsky

Chung H Lam

Robert L Bruce

Takeshi Masuda

Fabio Carta

Koukou Suu

Gloria Wing Yun Fraczak

Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

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Pound Ridge, NY, United States of America

Matthew Brightsky