Arizona State University

Intel Corporation

Matthew Bauer

John Tolle

John Kouvetakis

Ignatius S T Tsong

Shaestagir Chowdhury

Jeff Grunes

Jose Menendez

Soley Ozer

Chang Wu Hu

Candi Cook

A novel method for synthesizing device-quality alloys and ordered phases in a Si&#x2014;Ge&#x2014;Sn system uses a UHV-CVD process and reactions of SnDwith SiHGeH. Using the method, single-phase SiSnGesemiconductors (x&#x2266;0.25, y&#x2266;0.11) are grown on Si via GeSnbuffer layers The GeSnbuffer layers facilitate heteroepitaxial growth of the SiSnGefilms and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si&#x2014;Ge&#x2014;Sn materials. The SiHGeHspecies was prepared using a new and high yield method that provided high purity semiconductor grade material.

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A method for depositing an epitaxial Ge&#x2014;Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge&#x2014;Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250&#xb0; C. to about 350&#xb0; C. Using the process device-quality Sn&#x2014;Ge materials with tunable bandgaps can be grown directly on Si substrates.

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

A process for is provided for synthesizing a compound having the formula E(GeH)wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeHBr and [CH)Si]E are combined under conditions whereby E(GeH)is obtained. The E(GeH)is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH)can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.

An electroless plating bath for filling high aspect ratio features with copper metal comprises water, a water soluble copper containing compound having an initial concentration of 0.5 to 50 g/L, a catalyst reducing agent having an initial concentration of 0.02 to 1.5 g/L, a bulk reducing agent having an initial concentration of 2.37 to 29.7 g/L, a buffering agent having an initial concentration of 25 to 100 g/L, a grain refining additive having an initial concentration of 0.25 to 5.0 g/L, a bath stabilizing agent having an initial concentration of 0.02 to 0.1 g/L, and a rate controlling additive having an initial concentration of 0.01 to 0.5 g/L. The catalyst reducing agent may comprise glyoxylic acid and the bulk reducing agent may comprise glycolic acid or hypophosphite.

Growing community of inventors

Hillsboro, OR, United States of America

Matthew Bauer