Saint-gobain Ceramics & Plastics, Inc.

Saint-gobain/norton Industrial Ceramics Corporation

Norton Company

Coorstek, Inc.

Celestech, Inc.

Saint-gobain Industrial Ceramics, Inc.

Other

Matthew A Simpson

Oh-Hun Kwon

Brian Seegmiller

Russell Bell

Cesar Alfaro

Steve Govorchin

Anne Cenedella

Mark S Greenwell

Brahmanandam V Tanikella

Ramanujam Vedantham

Palaniappan Chinnakaruppan

Stephen M Jaffe

Robert A Rizzuto

Isaac K Cherian

Roger J Lin

Michael S Heuser

Merton C Flemings

Gordon L Cann

Louis K Bigelow

Henry Windischmann

Thomas A Gaspar

Grant Lu

Donald O Patten, Jr

Gregory Bak-Boychuk

Dan O Enniss

Christophe Coureau

John W Poole

Dominique Billieres

Kevin J Gray

Richard A Gorski

Darryl K Mack

Martin G Bradley

Christopher Arcona

Yeshwanth Narendar

Cecil B Shepard, Jr

Christopher D Jones

Robert A Hay

Stanley C Smith

Richard R Hengst

Robert M Frey

William A Quirk

Steven J Brox

Leo Eugene Kennedy

David I Gindhart

Alan Filer

Gérard Main

Jean-Michel Drouin

Ramesh Divakar

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 &#x3bc;m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Corrosion-resistant components and methods of making

Ceramic bonding tool with textured tip

A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 &#x3bc;m/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Sapphire substrate

Sapphire substrates and methods of making same

ESD safe ceramic component is provided which includes a sintered composition which is formed of a base material and a resistivity modifier. The base material includes a primary component and a secondary component, the primary component including AlOand the secondary component including tetragonal-ZrO.

Zirconia toughened alumina ESD safe ceramic composition, component, and methods for making same

A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReAO, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (SiGe), 0.25&#x2266;y&#x2266;1.2, and 0&#x2266;a&#x2266;1.

Semiconductor processing components and semiconductor processing utilizing same

A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 10Ohm-cm.

Electrostatic chuck and method of forming

A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle.

Methods of crystallographically reorienting single crystal bodies

Growing community of inventors

Sudbury, MA, United States of America

Matthew A Simpson