University of California

Leland Stanford Junior University

Matthew A Laurent

Umesh Kumar Mishra

Stacia Keller

Srabanti Chowdhury

Ramya Yeluri

Mohamadali Malakoutian

Xiang Liu

Silvia H Chan

Jeonghee Kim

Jing Lu

Siwei Li

Chenhao Ren

In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlGaN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.

Semiconductor apparatuses and methods involving diamond and GaN-based FET structures

A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge

Growing community of inventors

Rancho Palos Verdes, CA, United States of America

Matthew A Laurent