Micron Technology Incorporated

Matteo Impala′

Innocenzo Tortorelli

Mattia Robustelli

Fabio Pellizzer

Alessandro Sebastiani

Systems, methods, and apparatuses are provided for unipolar programming of memory cells in a semiconductor device. A memory has a plurality of self-selecting memory cells and circuitry configured to program a self-selecting memory cell of the plurality of self-selecting memory cells to a first data state or a second data state by applying a current pulse to the self-selecting memory cell. The current is a set pulse or a reset pulse. The set pulse and the reset pulse have a same polarity.

Unipolar programming of memory cells

Methods, apparatuses and systems related to reading data from memory cells configured to store more than one bit are described. The apparatus may be configured to determine a polarity data associated with reading data stored at a target location. In reading the data stored at the target location, the apparatus may apply one or more voltage levels across different polarities according to the determined polarity data.

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Milan, Italy

Matteo Impala′