Coventor, Inc.

Mattan Kamon

David M Fried

Kenneth B Greiner

Gunar Lorenz

Daniel Faken

Stephen R Breit

Vasanth Allampalli

Yiguang Yan

Modeling of electrical behavior during the virtual fabrication of a semiconductor device structure is discussed. Electrical behavior occurring in a designated region of a semiconductor device structure may be determined during the virtual fabrication process. For example, resistance or capacitance values may be determined within a modeling domain of interest.

System and method for electrical behavior modeling in a 3D virtual fabrication environment

The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.

System and method for performing directed self-assembly in a 3-D virtual fabrication environment

Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated from a 3-D model of a semiconductor device structure that was created in a 3-D virtual semiconductor fabrication environment from 2-D design layout data and a fabrication process sequence. The local mask is combined with a global mask based on the original design layout data to create a combined mask. The combined mask is convolved with at least one proximity function to generate a loading map which may be used to modify the behavior of one or more processes in the process sequence. This behavior modification enables the 3-D virtual semiconductor fabrication environment to deliver more accurate 3-D models that better predict the 3-D device structure when performing the virtual semiconductor device fabrication that serves as a prelude to physical fabrication.

Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment

A 3-D multi-physics design environment ('3-D design environment') for designing and simulating multi-physics devices such as MEMS devices is discussed. The 3-D design environment is programmatically integrated with a system modeling environment that is suitable for system-level design and simulation of analog-signal ICs, mixed-signal ICs and multi-physics systems. A parameterized MEMS device model is created in a 3-D graphical view in the 3-D design environment using parameterized model components that are each associated with an underlying behavioral model. After the MEMS device model is completed, it may be exported to a system modeling environment without subjecting the model to preliminary finite element meshing.

System and method for three-dimensional schematic capture and result visualization of multi-physics system models

A system-level design and simulation environment utilizing a process specification tool that is programmatically integrated with the system level design and simulation environment thereby enabling the process-flexible design and simulation of Micro Electro-Mechanical Systems (MEMS) devices and other micro-fabricated devices is disclosed. The process specification tool is a software tool for specifying the details of the fabrication process and enables the separation of the process data from the system-level design and simulation environment. The process specification tool retrieves the process data, which may include both the process specification and material properties data. The separation of this process data from the system-level design and simulation environment allows the system-level model to have process-related parameters whose specification is not fixed, but rather is tied by reference to the process data. The tying of components to the process data allows the system-level environment to extract multiple process parameters for each component model instead of requiring duplicate entry of these parameters in each component model, a time-consuming and error prone process. Modifications of the process data are programmatically communicated to the system-level environment. The dynamic response to changes in the process data allows alternative simulations to be run more effectively and quickly than in traditional IC design environments.

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Arlington, MA, United States of America

Mattan Kamon