Northrop Grumman Systems Corporation

Matt Yuji Nishimoto

Yun-Ho Chung

Jeffrey Ming-Jer Yang

Jeffrey M Yang

Gregory Hoke Rowan

Michael Battung

Richard Lai

Xing Lan

Patty P Chang-Chien

Robert Wang

Kelly Tornquist

Transistor devices are provided configured to operate at frequencies above a typical first cutoff frequency. In one aspect, a method is provided for configuring a transistor device to operate above a first cutoff frequency. The method comprises selecting a desired operating frequency range and a desired output power for a transistor associated with the transistor device, analyzing the effects of phase velocity mismatch on the overall gain of a plurality of different sized transistors, and evaluating the primary and secondary gain regions of the plurality of different sized transistors. The method further comprises selecting a transistor sized to provide the desired output power at or close to the desired operating frequency range based on the analysis of the phase velocity mismatch and the evaluation of the primary and secondary gain regions.

Transistor devices configured to operate above a first cutoff frequency

A reconfigurable circuit and a related method for its use, the circuit including multiple microelectromechanical systems (MEMS) switches connected between selected points in the circuit. The MEMS switches are controlled to select a desired circuit condition, such as an impedance matching condition, and then the switch conditions may be fused permanently. In the context of an impedance matching circuit, the MEMS switches may be used to optimize matching after circuit fabrication or after packaging, thereby allowing optimization even after potentially performance changing events.

Monolithically integrated switchable circuits with MEMS

A common source, bi-directional microwave amplifier is described. More particularly, the present invention is a microwave, common source, bi-directional amplifier that includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through the selective biasing of the first amplification path and the second amplification path. Each amplification path is designed to optimize desired performance. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. For signal flow through the second amplification path, the second amplification path is biased-on and the first path is biased-off.

Asymmetric, optimized common-source bi-directional amplifier

An electronically programmable multimode circuit is described. More particularly, the present invention is an electronically programmable multimode circuit that includes a first path and a second path wherein a mode and a signal directional flow direction is controlled through the selective biasing of the first path and the second path. A multimode circuit is produced that contains modes such as a phase shifter mode, an IQ modulation mode, an amplifier mode, a mixer mode, and a multiplier mode.

Electronically programmable multimode circuit

A bi-directional amplifier ( ) for a transceiver module for amplifying both transmit signals and receive signals propagating in opposite directions. The amplifier ( ) includes first and second common gate FETs ( ) electrically coupled along a common transmission line ( ). A first variable matching network ( ) is electrically coupled to the transmission line ( ) between a transmit signal input port ( ) and the first FET ( ), and a second variable matching network ( ) is electrically coupled to the transmission line ( ) between a receive signal input port ( ) and the second FET ( ). An interstage variable matching network ( ) is electrically coupled to the transmission line ( ) between the first and second FETs ( ). A DC voltage regulator ( ) provides a DC bias signal to the matching networks ( ) and the FETs ( ) so that different signal amplifications and different impedance matching characteristics can be provided for the transmit signal and the receive signal.

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Torrance, CA, United States of America

Matt Yuji Nishimoto