Wolfspeed, Inc.

Matt N McCain

Daniel Jenner Lichtenwalner

Sei-Hyung Ryu

Edward Robert Van Brunt

Joe W McPherson

Brett Hull

Woongsun Kim

Naeem Islam

Shadi Sabri

Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.

Power semiconductor devices including a trenched gate and methods of forming such devices

A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.

Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices

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Raleigh, NC, United States of America

Matt N McCain