Micron Technology Incorporated

Matt Meyers

Kevin L Beaman

Yunjun Ho

Gregory J Light

Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500&#xb0; C. The steam exposure may convert all of the polysilazane to silicon oxide. The silicon oxide may be annealed under an inert atmosphere. A maximum temperature of the silicon oxide during the annealing may be from about 700&#xb0; C. to about 1000&#xb0; C. In some embodiments, the isolation structures are utilized to isolate nonvolatile memory components from one another.

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Boise, ID, United States of America

Matt Meyers