University of California

Albert Einstein College of Medicine

Matt Law

Peidong Yang

Rong Fan

Michelle Khine

Donald J Sirbuly

Andrea R Tao

Richard J Saykally

Jun Hu

Ruqian Wu

Michael David Brenowitz

Jason Tolentino

Yanning Zhang

Justin C Johnson

Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.

Method to fabricate quantum dot field-effect transistors without bias-stress effect

Disclosed are hydroxyl radial generating devices, comprising: a substrate layer; and a pyrite layer configured to produce hydroxyl radicals. Another aspect relates to a method for producing a hydroxyl radical generating device, comprising: providing a polymeric substrate layer; placing a layer of pyrite on a surface of the polymeric substrate layer to form a multi-layer structure; and applying heat to the multi-layer structure such that at least the surface of the polymeric substrate layer contracts; wherein the layer of pyrite contracts to a lesser extent than the surface of the polymeric substrate layer providing a textured surface comprising the pyrite layer. Also disclosed is a method of analysis, comprising: placing a solution comprising a biological substance on a sample site of a hydroxyl generating device comprising a surface of pyrite; incubating the solution; and analyzing a sample including proteolytic fragments of the biological substance.

Pyrite shrink-film laminate as a hydroxyl radical generator

A method of increasing the band gap of iron pyrite by alloying with oxygen is disclosed. According to one embodiment, a method comprises alloying iron pyrite (FeS) with oxygen to form an iron pyrite and oxygen alloy (FeSO). The iron pyrite and oxygen alloy (FeSO) has a band gap greater than iron pyrite (FeS).

Method of increasing the band gap of iron pyrite by alloying with oxygen

Nanoribbons and nanowires having diameters less than the wavelength of light are used in the formation and operation of optical circuits and devices. Such nanostructures function as subwavelength optical waveguides which form a fundamental building block for optical integration. The extraordinary length, flexibility and strength of these structures enable their manipulation on surfaces, including the precise positioning and optical linking of nanoribbon/wire waveguides and other nanoribbon/wire elements to form optical networks and devices. In addition, such structures provide for waveguiding in liquids, enabling them to further be used in other applications such as optical probes and sensors.

Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

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Irvine, CA, United States of America

Matt Law