Stmicroelectronics S.a.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics(tours) Sas

Mathieu Roy

Jean-Yves Laurent

Eric Bernier

Jean-Louis Sanchez

Jean Jalade

Jean-Pierre Laur

Marie Breil

Patrick Austin

Fabien Pierre

Sébastien Kouassi

A hydrogen-air fuel cell having a mobile element capable of, in closed position, covering the cell cathode in substantially tight fashion.

Fuel cell protection device

A thin wafer comprising through holes filled at least partially with conductive carbon nanotubes generally oriented transversally to the wafer. A fuel cell comprising, in a thin wafer, a through hole filled with an electrolyte surrounded with barriers of carbon nanotubes generally oriented transversally to the wafer.

Wafer provided with transverse conductors and application to a fuel cell

A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive layer extending above the substrate between the second region and the wall. The component includes a third N-type region of high doping level formed in the substrate under the portion of the layer substantially halfway between the external periphery of the second region and the internal periphery of the wall. This third region is contacted by a field plate extending on either side of the third region in the direction of the wall and of the third region.

Power component bearing interconnections

A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

Vertical power component manufacturing method

A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the first and second regions and having to be withstood by the junctions between the first and second regions and the substrate. A deep insulating region that does not join the first region is provided at the lower periphery of the component, the lower surface of the substrate between said deep insulating region and the first region being coated with an insulating layer, the height of the deep insulating region being greater than that of a possible soldering upward extension formed during the soldering of the lower surface on a heat sink.

Vertical component peripheral structure

A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive track extending above the substrate between the second region and the wall. The component includes a succession of trenches extending in the substrate under the track and perpendicularly to this track, each trench being filled with an insulator.

A monolithic power switch with a controlled di/dt including the parallel assembly of a MOS or IGBT type component with a thyristor type component, including means for inhibiting the thyristor type component during the closing phase of the switch, which is ensured by the IGBT type component. The IGBT type component has a vertical multicell structure and the component of thyristor type has a vertical monocell structure.

Growing community of inventors

Joue les Tours, France

Mathieu Roy