Koninklijke Philips Corporation N.V.

Asm America, Inc.

Interuniversitair Microelektronica Centrum (imec)

Interuniversitair Micro-elektronica Centrum Vzw

Mathieu Caymax

Jan Willem Maes

Philippe Meunier-Beillard

Roger Loo

Peijun Chen

Tsai Wilman

Romain Delhougne

The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.

Method for forming a high-k dielectric stack

A semiconductor device is provided comprising a semiconductor substrate having on its top a Thin Strain Relaxed Buffer. The Thin Strain Relaxed Buffer consists of a stack of three layers of essentially constant Ge concentration. The three layers include a first epitaxial layer of SiGe, a second epitaxial layer of SiGe:C, and a third epitaxial layer of SiGeon the second epitaxial layer. A method to fabricate such a buffer is also provided.

SiGe strain relaxed buffer for high mobility devices and a method of fabricating it

Growing community of inventors

Leuven, Belgium

Mathieu Caymax