Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Mathieu Bernard

Gabriele Navarro

Marie-Claire Cyrille

Chiara Sabbione

Christelle Charpin-Nicolle

Remy Gassilloud

Thomas Magis

Rémy Gassilloud

Camille Laguna

A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Selection element with a plurality of amorphous layers

An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted &#x394;G(M3M4O), or of the quaternary alloy M3M4NO, noted &#x394;G(M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted &#x394;G(M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted &#x394;G(M2NO):&#x394;(34O)&#x3c;&#x394;(1)&#x2264;&#x394;(2NO)or &#x394;(34NO)&#x3c;&#x394;(1)&#x2264;&#x394;(2NO).

OxRAM oxide based resistive random access memory cell and associated manufacturing method

A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Storage element

A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Growing community of inventors

Grenoble, France

Mathieu Bernard