Infineon Technologies Ag

Infineon Technologies Austria Ag

Mathias Von Borcke

Markus Zundel

Thorsten Meyer

Hermann Gruber

Markus Zannoth

Benno Koeppl

Thomas Gross

Matthias Bogus

Uwe Schmalzbauer

Karl-Dieter Hein

Hans Joachim Schulze

Karl-Josef Martin

Rainer H&ouml;hler

Werner Irlbacher

A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

Methods for producing polysilicon resistors

A circuit having a power transistor and drive circuit is disclosed. One embodiment provides a drive terminal and a load path. The power transistor is integrated in a first semiconductor body. A first sensor arrangement having a sensor transistor is integrated in the first semiconductor body. The sensor arrangement provides a first sensor signal dependent on a threshold voltage of the sensor transistor. A drive circuit to which the first sensor signal is supplied and designed to drive the power transistor via its drive terminal as a function of the first sensor signal.

Circuit having a power transistor and a drive circuit

A circuit arrangement includes a half-bridge with a high-side switch and a low-side switch, each switch including a control terminal and a load path. The load paths of the high-side switch and the low-side switch are coupled in series between a terminal for a supply potential and a terminal for a reference potential a high-side driver operable to provide a high-side drive signal received at the control terminal of the high-side switch. The high-side driver includes supply terminals a charge storage device coupled between the supply terminals of the high-side driver. A control circuit includes a charging circuit, a switching element and a drive circuit operable to switch on the switching element dependent on at least one operation parameter of the circuit arrangement.

Circuit arrangement for driving transistors in bridge circuits

An integrated circuit including a semiconductor device is disclosed. One embodiment provides a load current component, having a multiplicity of trenches in a cell array. A sensor component is integrated into the cell array of the load current component and has a sensor cell array, the area of which is smaller than the area of the cell array of the load current component by a specific factor. The trenches forming the cell array of the sensor component correspond to the trenches of the cell array of the load current component, configured such that the trenches of the sensor component at the at least one side merge uniformly into the trenches of the cell array of the load current component without interruptions or disturbances of the trench geometry.

Integrated circuit including a semiconductor device

The invention relates to a circuit configuration for the interference-free initialization of delay locked loop circuits with fast lock. A control signal for rapidly adjusting the DLL circuit is converted into a delayed control signal, which is kept constant with the rising edge of a counter clock signal. This prevents instabilities of the counter value from occurring.

Circuit configuration for the interference-free initialization of delay locked loop circuits with fast lock

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Munich, Germany

Mathias Von Borcke