Infineon Technologies Ag

Mathias Racki

Norbert Krischke

Markus Zundel

Marcus Nuebling

Thomas Krotscheck Ostermann

Adrian Finney

Sven Lanzerstorfer

Nicola Vannucci

A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 MΩ.

Semiconductor arrangement with an integrated temperature sensor

An example circuit includes a coil structure located on at least a first layer of an integrated circuit (IC); and a circuit component comprising conduction paths. The conduction paths are located on one or more layers separate from the first layer and the first layer and the one or more layers form parallel planes. The conduction paths of the circuit component are oriented to avoid eddy currents in the conduction paths caused by an electric current through the coil structure and form a patterned shield. At least some of the conduction paths define an area, and the coil structure is located within the defined area.

Active under shielding for coils and transformers

A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.

Transistor

Growing community of inventors

Hilgertshausen-Tandern, Germany

Mathias Racki