International Business Machines Corporation

Mathias Pierre Jeanneret

Richard Philip Surprenant

Kamalesh S Desai

Edward Sumner Begle

Stephen J Tirch, Iii

Nancy Wagner Hannon

Brian D Husson

A multilayer thin film via landing pad structure includes a thin film conductor structure with a recessed landing pad formed between an upper layer of polyimide dielectric and a lower layer of polyimide dielectric. A multilayer thin film via landing pad structure is formed on a lower layer of dielectric having a top surface. A depression is formed in the top surface of the lower layer of dielectric. The depression has a bottom within the lower layer. A recessed landing pad comprising a conductor is formed in the depression on the surface of the lower layer of dielectric. A conductor line is formed on the lower layer of dielectric in contact with the recessed landing pad. An upper layer of dielectric is formed over the lower layer of dielectric, the thin film conductor line and the recessed landing pad. A conductive via is formed extending through the upper layer of dielectric into contact with the recessed landing pad. Both the recess and the via are formed by laser ablation with the identical mask and laser ablation tool.

Method of forming recessed thin film landing pad structure

A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a photoresist layer can cause defects in the metal layer that defines the desired metallic pattern. Contaminants in the photoresist layer prevent portions of the photoresist layer from being exposed and developed away, so that portions of the photoresist layer that should be developed away remain in place, thereby causing the development of defects in the metal layer that defines the desired metallic pattern. These contaminants move to different positions during the developing away of the photoresist. By exposing those portions of the photoresist layer that are no longer shielded from exposure by the contaminants because the contaminants have moved to different positions, those portions of the photoresist layer now can be developed away, so that they are no longer present and no longer cause defects in the metal layer that defines the desired metallic pattern.

Method for making a metallic pattern by photolithography

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Hopewell Junction, NY, United States of America

Mathias Pierre Jeanneret