Robert Boschgmbh

Mathias Mews

Frank Schatz

Timo Schary

Daniel Monteiro Diniz Reis

Jochen Tomaschko

Daniel Pantel

An apparatus and a method for monitoring a semiconductor component are disclosed. A leakage current which flows through a first electrode and a second electrode of the semiconductor component is detected during operation of the semiconductor component. During a comparison, the leakage current is compared with a first limit value for the leakage current and an output is determined on the basis of a result of the comparison and/or a time is determined at which an extreme point, in particular a maximum, of the leakage current occurs and an output is determined on the basis of the time. The output comprises a state of the semiconductor component, and the output is output.

Apparatus and method for monitoring a semiconductor component

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τand τ, and generate the maximum changes in barrier height δΦand δΦat the electrodes. τand δΦare associated with the first defect type, and τand δΦare associated with the second defect type. τ<τand δΦ<δΦapply.

Semiconductor component including a dielectric layer

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.

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Reutlingen, Germany

Mathias Mews