Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Mathias Kämpf

Jens Dennemarck

Korbinian Perzlmaier

Heribert Zull

Thomas Veit

Frank Singer

Franz Eberhard

Andreas Plöβl

Bernd Böhm

Ewald Karl Michael Günther

Kathrin Lampert

Ulrich Steegmüller

Harald König

Roland Enzmann

Wolfgang Gramann

Nikolaus Gmeinwieser

Markus Horn

Markus Arzberger

Gudrun Lindberg

Christoph Walter

Tomasz Swietlik

Melanie Ring

Stephan Haneder

Jürgen Dachs

Markus Graul

Ewald K M Günther

Robin Fehse

Gudrun Geyer

Robert Fürst

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Method of producing semiconductor chips that efficiently dissipate heat

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Method of producing a semiconductor body

A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Carrier substrate and method for producing semiconductor chips

A suspension for protecting a semiconductor material, comprising a carrier medium, trimethylolpropane as a plasticizer, benzotriazole derivate as an absorber dye, and inorganic particles selected from the group consisting of aluminum nitride, silicon nitride and boron nitride, wherein the thermal conductivity of the suspension is about 1 W/mk to about 2 W/mk.

Suspensions for protecting semiconductor materials and methods of producing semiconductor bodies

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Method of producing a semiconductor laser element, and semiconductor laser element

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Method for producing a semiconductor body

A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Suspensions for protecting semiconductor materials and methods for producing semiconductor bodies

A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.

Method for producing a plurality of optoelectronic semiconductor chips

The invention relates to a photodiode array comprising a photodiode and a submount, via which the photodiode is contacted, said photodiode and said submount being interlinked by eutectic bonding. The invention further relates to a method for establishing a link between a first semiconductor element and a second semiconductor element which have different outer contours, the two elements being interlinked by eutectic bonding when already being present as a wafer composite. The two interlinked wafers are subdivided one by one and independently of each other in accordance with the desired outer contour.

Photodiode array and method for establishing a link between a first semiconductor element and a second semiconductor element

An optical sensing head, which is for reading out an optical data memory, has a substrate with a main surface. An edge-emitting laser component is configured on the main surface of the substrate and has irradiation axis oriented essentially parallel to the first main plane. A deflection device is arranged on the main surface of the substrate and deflects the laser radiation in a direction that is essentially perpendicular to the main surface. At least one signal detector is provided for sensing the laser radiation that is reflected by the optical data memory. An optical element guides the deflected laser radiation to the optical data memory and guides reflected laser radiation to the signal detector. The optical element is connected to the substrate by at least one supporting element. The invention also includes a method for fabricating such a sensing head.

Optical sensing head and method for fabricating the sensing head

Growing community of inventors

Burglengenfeld, Germany

Mathias Kämpf