University of Kentucky Research Foundation

Mathias Joseph Boland

Douglas Robert Strachan

Armin Ansary

Mohsen Nasseri

Abhishek Sundararajan

A nanoscale conductor/semiconductor/insulator device includes a substrate with a lattice and a plurality of nanotubes in crystallographic alignment with the lattice at an interface between the plurality of nanotubes and the substrate. Another such device includes a substrate, meandering tracks in the substrate and a plurality of nanotubes adhering to cut-atomic-step edges of the meandering tracks. Methods of making the nanoscale conductor/semiconductor/insulator devices are also disclosed.

Ordered nanotubes on a two-dimensional substrate consisting of different material properties

The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the atomically-thin material. The resulting device offers an ultra-short gap with ballistic transport and demonstrated switching in the presence of a gate or dielectric material in close proximity to the channel.

Growing community of inventors

Lexington, KY, United States of America

Mathias Joseph Boland