Other

Agilent Technologies, Inc.

Keysight Technologies, Inc.

Mathias Bonse

Hagen Klauk

Thomas N Jackson

Eric R Ehlers

Timothy Earl Shirley

Daniel B Thomasson

Jerry Orr

Jim Clatterbaugh

Martin W Dvorak

Rory R Stine

David J Gundlach

Shusen Huang

A method of forming an HBT structure includes forming an HBT epitaxial layer structure over a first substrate wafer; performing a first substrate transfer of the HBT epitaxial layer structure and the first substrate wafer onto a second substrate wafer, including inverting the HBT epitaxial layer structure and the first substrate wafer; removing the first substrate wafer; forming a first subcollector metal layer over the HBT epitaxial layer structure; performing a second substrate transfer of the subcollector metal layer and the HBT epitaxial layer structure onto a third substrate wafer with a second subcollector metal layer, including inverting the subcollector metal layer and the epitaxial layer structure; compression bonding the first and second subcollector metal layers to provide a bonded subcollector metal layer; and removing the second substrate wafer. The HBT structure includes the third substrate wafer, the bonded subcollector metal layer, and the HBT epitaxial layer structure.

Method of forming heterojunction bipolar transistor (HBT)

A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Through-chip via interconnects for stacked integrated circuit structures

An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.

Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production

Growing community of inventors

Santa Rosa, CA, United States of America

Mathias Bonse