Honeywell International Inc.

The Alta Group, Inc.

Mathew S Cooper

Stephen P Turner

Yinshi Liu

Rodney L Scagline

Michael McCarty

Robert S Cole

Wei Guo

Harry W Rosenberg

Yun Xu

David B Love

Edward Cawley

The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.

Methods of forming titanium-containing superconducting compositions

A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, I (200)/I (10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-351 from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.

High purity cobalt sputter target and process of manufacturing the same

A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, I (200)/I (10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422&deg; C.). Annealing the material, at a temperature in the range 300-422&deg; C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-35&deg; from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.

A method is disclosed for producing an anodized film on titanium, its alloys and other metals such that the film deposited will have a specific leak rate of less than one nanoamp per square centimeter at room temperature with an impressed electric field of at least five volts, where the anodization is performed in a solution consisting of liquid ortho-phosphoric acid of reduced water content in an aprotic solvent, and articles of manufacture therefrom.

Process for producing electrically impervious anodized films on valve

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Portersville, PA, United States of America

Mathew S Cooper