Soraa Laser Diode, Inc.

University of California

Soraa, Inc.

Japan Science and Technology Agency

Kyocera Sld Laser, Inc.

Mathew C Schmidt

James W Raring

Yu-Chia Chang

Christiane Poblenz

Shuji Nakamura

James Stephen Speck

Steven P DenBaars

Melvin McLaurin

Daniel F Feezell

Christiane Elsass

Bryan Ellis

Thiago P Melo

Nicholas J Pfister

Rajat Sharma

Robert M Farrell

Kwang-Choong Kim

Kwang Choong Kim

Nick Pfister

Mark Philip D'Evelyn

Hitoshi Sato

Hua Huang

Daniel A Cohen

Hisashi Masui

Arpan Chakraborty

Rafael Ignacio Aldaz

Derrick S Kamber

Andrew Felker

Evelyn Lynn Hu

Adele Clare Tamboli

Kenneth John Thomson

William Houck

Christiane Poblenz Elsass

Nicholas Andrew Vickers

Drew Felker

David Press

Stephen P DenBaars

Hitsohi Sato

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Method and system for providing directional light sources with broad spectrum

A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Laser diodes with an etched facet and surface treatment

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

Gallium and nitrogen containing laser device configured on a patterned substrate

Laser diodes with a surface treatment

Gallium nitride containing laser device configured on a patterned substrate

A gallium- and nitrogen-containing laser device including a facet with surface treatment to improve an optical beam is disclosed.

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates

Growing community of inventors

Fremont, CA, United States of America

Mathew C Schmidt