Nxp B.v.

Nxp USA, Inc.

Mateus Ribeiro Vanzella

Ricardo Pureza Coimbra

Luis Enrique Del Castillo

Matheus Silveira Remigio

A low power temperature detection method, system, and apparatus sense when a temperature threshold is reached by connecting a current conveyor () with a startup bias circuit () having a first FET (P) (connected to level shift a reference voltage to provide an input voltage V), a first diode-connected BJT (Q) (connected to generate a base-emitter voltage based on the junction temperature), and a second FET (P) (connected to level shift the base-emitter voltage), where the startup bias circuit () selectively connects the current conveyor () to ground to form a closed loop that is activated only when an emitter current at the first diode-connected BJT (Q) enters a self-turned-on operation region, thereby activating the current conveyor to detect a temperature threshold being reached by the device junction temperature.

Self-turn-on temperature detector circuit

A temperature detection circuit includes a first current path and a second current path. The first current path includes a first transistor with a control terminal coupled to receive a reference voltage and includes a temperature sensing device. The second current path includes a second transistor with a control terminal coupled to a node of the first current path. The second current path includes a node that provides an indication of a detected temperature.

Temperature detection circuit

A sample and hold circuit configured to sample a current includes an input node to receive the current, a capacitor coupled with a sampling node and a reference voltage node, switch between the input node and the sampling node, a controlled current source coupled to the input node, a current mirror circuit having connections each providing a mirrored current, wherein at least one of said connections provides an output node, and a transistor arrangement. The transistor arrangement includes a control MOSFET in series with a series connected chain of cascaded cells. The control MOSFET and each of said cascaded cells are coupled to the current mirror circuit and each of the cascaded cells includes a pair of MOSFETs arranged to provide a voltage difference including a difference between a gate-source voltage of a first of the pair and a gate-source voltage of a second of the pair.

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Campinas, Brazil

Mateus Ribeiro Vanzella