Semiconductor Energy Laboratory Co., Ltd.

Masumi Mitsubori

Hotaka Maruyama

Kaoru Kato

A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.

Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide

Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof

Growing community of inventors

Kanagawa, Japan

Masumi Mitsubori