Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Samsung Display Co., Ltd.

Panasonic Corporation

Masumi Izuchi

Shinichi Machida

Manabu Nakata

Sanshiro Shishido

Takeyoshi Tokuhara

Masaaki Yanagida

Yasunori Inoue

Hiroaki Iijima

Masashi Murakami

Mikihiko Nishitani

Akihito Miyamoto

Hiroshi Tsutsu

Kenichi Sasai

Yoshichika Osada

Masashi Goto

Mika Nakamura

Yutaka Nanno

Keizaburo Kuramasu

Yoshinao Taketomi

Hiroshi Satani

Hikaru Nishitani

Yoshiko Mino

Takeo Azuma

Satoshi Sato

Kunio Nobori

Kazuo Inoue

Osamu Inoue

Nobuhiko Wakai

Masahiro Sakai

Seiji Takagi

Katsumi Adachi

Hiroshi Asano

Tetsuya Kawamura

Mitsuru Harada

Naomi Kaneko

Tatsunori Momose

The light-emitting device includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor.

Light-emitting device comprising flexible substrate and light-emitting element

An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

Imaging apparatus

An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and voltage supply circuit

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Imaging device including at least one unit pixel cell and voltage application circuit

An image generation device includes: a voltage generator that generates a plurality of voltages each having a different voltage value; an image capturer that includes an organic photoconductive film, and performs imaging every time each of the plurality of voltages is applied; a luminance data obtainer that obtains a plurality of luminance data items corresponding to the plurality of voltages applied, each of the plurality of luminance data items being obtained from the imaging performed by the image capturer; and a color image generator that generates a color image based on the plurality of luminance data items.

Image generation device and image generation method

An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Imaging apparatus including unit pixel, counter electrode, photoelectric conversion layer, and computing circuit

An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.

Imaging device including a photoelectric converter and a voltage application circuit

A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Method for controlling imaging device, and imaging device

Imaging device including at least one unit pixel cell

Growing community of inventors

Osaka, Japan

Masumi Izuchi