Matsushita Electric Industrial Co., Ltd.

Masumi Hattori

Hideo Torii

Ryoichi Takayama

Eiji Fujii

Atsushi Tomozawa

Yasuhiko Horio

Satoru Fujii

Takayuki Takeuchi

Hiroyuki Hase

Shinichi Tanaka

Masaki Aoki

Takashi Hirao

Takeshi Kamada

Shigenori Hayashi

Toru Ishida

Kiyoshi Kuribayashi

Kenji Kuwahara

Tomi Sato

Ken Kamata

A non-reciprocal circuit element for transmitting a signal in one way or cyclically transmitting the signal by using circuit means having at least a ferrite ( ), transmission lines ( and ), and a capacitor ( ), has at least two external input/output terminals ( and ) for transferring a signal to and from an external unit and at least one of external grounding terminals ( and ) for grounding, wherein at least one ( ) of the external grounding terminals is set between at least one set of the external input/output terminals ( and ).

Non-reciprocal circuit element, lumped element type isolator, and mobile communication unit

Non-reciprocal circuit element having a grounding land between input/output patterns

A non-reciprocal circuit element for transmitting a signal in one way or cyclically transmitting the signal by using circuit means having at least a ferrite ( ), transmission lines ( , and ), and a capacitor ( ), and has at least two external input/output terminals ( and ) for transferring a signal to and from an external unit and at least one of external grounding terminals ( , and ) for grounding, wherein at least one ( ) of the external grounding terminals is set between at least one set of the external input/output terminals ( and ).

Non-reciprocal circuit element with ground terminals on one side free of input/output terminals

A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.

Method of manufacturing a thin film sensor element

A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

Method for producing a laminated thin film capacitor

A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to &lt;100&gt; direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.

Thin film sensor element and method of manufacturing the same

A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.

Surface wave filter element

Laminated thin film capacitor and method for producing the same

A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

Thin film capacitor and method of manufacturing the same

A magnetic recording medium, comprising; a 2-layer film formed on a glass disk substrate as an under layer composed of an amorphous oxide or NaCl oxides like a NiO or CoO and the like, or any soft magnetic oxide of Mn-Zn ferrite, Ni-Zn ferrite and the like, or a combination of those 2 materials; a magnetic recording medium formed thereon composed of a Co ferrite perpendicular magnetic film of a columnar structure; and a structure formed thereon with a lubricant layer medium. This magnetic recording medium is used for a magnetic rigid disk apparatus. The substrate is made by press-molding the glass plate at a high temperature. The under layer film and Co ferrite film are composed of vapors of organic material compounds and oxygen as their raw materials, and made by a plasma assisted CVD method.

Magnetic recording medium and its manufacturing process

A glaze resistor composition composed of a glass frit, molybdenum disilicide, tantalum disilicide, magnesium silicide and aluminum. This glaze resistor composition has a small temperature coefficient of resistivity, a high resistivity stability and small current noises, and can be used in a wide resistivity range.

Glaze resistor composition

A glaze resistor composition composed of magnesium silicide, molybdenum disilicide, tantalum disilicide and glass frit, and if necessary, manganese disilicide and/or aluminum oxide. Due to the use of magnesium silicide, glaze resistors having stable resistivities in a wide resistivity range can be obtained. Due to the use of manganese disilicide, the temperature coefficient of resistivity can be shifted to the positive side, and due to the use of aluminum oxide, the resistivity can be increased and made more stable. This invention also provides a method of making a glaze resistor using two heating steps, in which aluminum oxide is mixed in the starting powder mixture to be subjected to the first heating step, so as to enhance the effect of the aluminum oxide addition.

Growing community of inventors

Hirakata, Japan

Masumi Hattori