Stmicroelectronics S.r.l.

Massimo Scardaci

Ignazio Martines

The invention relates to a voltage regulation system for multiword programming in non volatile memories, for example of the Flash type, with low circuit area occupation, wherein memories comprise at least a memory cell matrix organized in cell rows and columns and with corresponding circuits responsible for addressing, decoding, reading, writing and erasing the memory cell content. The memory cells have drain terminals connected to matrix columns and are biased in the programming step with a predetermined voltage value by means of program load circuits associated to each matrix column. In parallel with each program load circuit, a conduction-to-ground path is enabled by a controlled active element.

Voltage regulation system for a multiword programming of a low integration area non volatile memory

A circuit for generating a constant pulse signal from an enabling ATD input signal may include a latch structure connected between first and second circuit nodes, with each node being coupled to a corresponding charge and discharge capacitance and being also connected to respective inputs of a logic gate. The circuit may also include a memory element coupled to the circuit nodes for filtering the enabling ATD signal and avoiding a partial discharge of one of the capacitances. An output of the logic gate is provided for generating the pulse signal independent of voltage and/or temperature variations affecting the enabling ATD signal.

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Gallipoli, Italy

Massimo Scardaci