Micron Technology Incorporated

Massimo Rossini

Violante Moschiano

Tommaso Vali

Giovanni Santin

William Henry Radke

Jun Xu

Huanyou Zhan

Eleuterio Mannella

A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and a power management component, operatively coupled with the memory array. The power management component sends a test value to one or more other power management components on one or more other memory dies of the plurality of memory dies and receives one or more other test values from the one or more other power management components. The power management component compares the test value and the one or more other test values to a set of expected values, and responsive to the test value and the one or more other test values matching the set of expected values, determines that signal connections between the power management component and the one or more other power management components are functional.

Peak power management connectivity check in a memory device

Described are systems and methods for estimating the resistance-capacitance time constant of an electrical circuit (e.g., of a wordline of a memory device). An example system comprises: a memory device comprising a plurality of memory cells electrically coupled to a plurality of wordlines; a resistance-capacitance (RC) measurement circuit to measure a voltage at a specified wordline of the plurality of wordlines; and a processing device coupled to the memory device. The processing device is configured to: apply an initial voltage to a selected wordline of the plurality of wordlines; discharge the selected wordline for a discharge period of time; float the selected wordline until a voltage at the selected wordline is stabilized; determine, by the RC measurement circuit, a stabilized voltage at the selected wordline; and estimate, based on the stabilized voltage, an RC time constant of the wordline.

Estimating resistance-capacitance time constant of electrical circuit

A memory device has a controller. The controller is configured to cause the memory device to inhibit programming of a group of memory cells. The controller is configured to cause the memory device to apply a programming pulse to control gates of the group of memory cells. The controller is configured to determine an amount of disturb experienced by the group of memory cells responsive to the programming pulse. The controller is configured to determine a program window responsive to the amount of disturb.

Dynamic program window determination in a memory device

A memory device has an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to determine a program window after a portion of a particular programing operation performed on the memory device is performed and before a subsequent portion of the particular programing operation performed on the memory device is performed. The controller is configured to determine the program window responsive to an amount of program disturb experienced by a particular state of a memory cell. The controller is configured to perform the subsequent portion of the particular programing operation performed on the memory device using the determined program window.

A memory device has an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to determine a program window after a portion of a particular programming operation performed on the memory device is performed and before a subsequent portion of the particular programming operation performed on the memory device is performed. The controller is configured to determine the program window responsive to an amount of program disturb experienced by a particular state of a memory cell. The controller is configured to perform the subsequent portion of the particular programming operation performed on the memory device using the determined program window.

Methods for determining a program window and memory devices are disclosed. One such method for determining the program window measures an amount of program disturb experienced by a particular state and determines the program window responsive to the amount of program disturb.

Embodiments of the present disclosure provide methods, devices, modules, and systems for programming multilevel non-volatile multilevel memory cells. One method includes increasing a threshold voltage (Vt) for each of a number of memory cells until the Vt reaches a verify voltage (VFY) corresponding to a program state among a number of program states. The method includes determining whether the Vt of each of the cells has reached a pre-verify voltage (PVFY) associated with the program state, selectively biasing bit lines coupled to those cells whose Vt has reached the PVFY, adjusting the PVFY to a different level, and selectively biasing bit lines coupled to cells whose Vt has reached the adjusted PVFY, wherein the PVFY and the adjusted PVFY are less than the VFY.

Growing community of inventors

Rome, Italy

Massimo Rossini