Ams-osram International Gmbh

Osram Opto Semiconductors Gmbh

Massimo Cataldo Mazzillo

Tim Boescke

Wolfgang Zinkl

Daniel Dietze

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

Integrated semiconductor optoelectronic component

An integrated photodetecting optoelectronic semiconductor component configured to deliver an output signal indicative of the intensity of light irradiating the component. The component may include a SPAD-based main detection device configured to detect incoming photons and to deliver an output signal based on the detected photons. The component may also include a SPAD-based reference detection device proximate to the main detection device where the reference detection device has the same electro-optical behaviour as the main detection device, is configured to detect incoming photons, configured to deliver a reference signal based on the detected photons, and has a light inlet for incoming photons. The component may also include a neutral density filtering device and a controller configured to determine a nominal output signal, compare the nominal output signal with the output signal delivered by the main detection device, and adjust an operating parameter based on the comparison.

SPAD-based photodetectors

An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

Integrated photodetecting semiconductor optoelectronic component

An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

Light detection with semiconductor photodiodes

In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.

Photodiode and method for operating a photodiode

A semiconductor photodiode () comprises a top side () with an active surface area () for light entry, a bottom side (), a bulk structure () made of a single semiconductor material, the bulk structure comprising a p-type layer () and an n-type layer (), which together form the p-n junction () of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer () and the other one is a lower p-n junction layer (), wherein the upper p-n junction layer () is located proximate to the active surface area (), and a semiconductor light absorption layer (), wherein the light absorption layer (), () defines the active surface area () and is arranged on top of the bulk structure (), above the upper p-n junction layer (), and the semiconductor material of the light absorption layer () is different from the semiconductor material of the bulk structure (), the light absorption layer () and the upper p-n junction layer () thus forming a heterojunction, and the photodiode () further comprises a precursor layer () arranged between the bulk structure () and the light absorption layer (), the light absorption layer () being grown on the precursor layer.

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Hamburg, Germany

Massimo Cataldo Mazzillo