Eth Zuerich

Consiglio Nazionale Delle Ricerche

Massimo Camarda

Francesco La Via

Andrea Severino

Ulrike Grossner

A method forms a part of a power semiconductor device. The method includes homoepitaxially forming two silicon carbide layers on a first side of a silicon carbide substrate and forming a pattern of pits on a second side of the silicon carbide substrate. The two layers include a buffer layer, on the first side of the silicon carbide substrate, and have a same doping type of the silicon carbide substrate and a doping concentration equal to or greater than 10cmin order to increase the quality of at least one subsequent SiC layer. The two layers include an etch stopper layer, being deposited on the buffer layer and has a same doping type as the buffer layer but a lower doping concentration in order to block a trenching process. The pattern of pits, obtained by electrochemical etching, extends completely thorough the silicon carbide substrate and the buffer layer.

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Mascalucia, Italy

Massimo Camarda