National University of Singapore

University of Michigan

Arm Limited

Agency for Science, Technology and Research

Massimo Alioto

David Theodore Blaauw

Fakhruddin Ali Bohra

Dennis Michael Chen Sylvester

Mahmood Khayatzadeh

Longyang Lin

Saurabh Jain

Dennis Sylvester

Jae-Yoon Sim

Yoonmyung Lee

Yen-po Chen

Kien Trinh Quang

Sachin Taneja

Sergio Ruocco

A method of generating true random numbers for use by a cryptographic hardware component for cryptographic algorithms or communication protocols, and a cryptographic hardware component for cryptographic algorithms or communication protocols. The method comprises the steps of controlling a clock pulsewidth, PW, for pulsed-latch clocking in the cryptographic hardware component to switch between using the cryptographic hardware component to generate the true random numbers in a first operating state; and using the cryptographic hardware component for cryptographic processing in a second operating state.

Method and apparatus for true random number generation within cryptographic hardware

A cell logic structure for a battery-indifferent or pure energy harvesting multi-mode system, a battery-indifferent or pure energy harvesting multi-mode system, a method of operating a cell logic structure for a battery-indifferent or pure energy harvesting multi-mode system, and a method of operating battery-indifferent or pure energy harvesting multi-mode system. The cell gate structure comprises a CMOS gate circuit; a header circuit coupled to the CMOS gate circuit and comprising first and second header transistors for coupling in parallel between a supply voltage and the CMOS gate circuit; and a footer circuit coupled to the CMOS gate circuit and comprising first and second footer transistors for coupling in parallel between the CMOS gate circuit and a ground voltage; wherein the header and footer circuits are configured for switching between different operation modes of the multi-mode system, the different operation modes chosen from a range from a normal mode in which feedback paths from an output of the CMOS gate circuit to the gate of the second header transistor and to the gate of the second footer transistor are substantially or fully disabled for full swing in the output voltage of the CMOS gate circuit, and a leakage suppression mode in which the feedback paths are substantially or fully enabled.

Multi-mode standard cell logic and self-startup for battery-indifferent or pure energy harvesting systems

A method of providing a reference voltage for reading of a resistive memory array, and a read circuit for reading of a resistive memory array. The method comprises the steps of generating a first reference voltage when a bitline of the resistive memory array is in a first resistance state, and generating a second reference voltage when the bitline is in a second resistance state; wherein the first reference voltage is different from the first reference voltage and the first resistance state is different from the second resistance state.

Dynamic reference scheme for improving read margin of resistive memory array

Various implementations described herein may refer to and may be directed to circuitry for an integrated circuit using topology configurations. For instance, in one implementation, such circuitry may include a memory array having a plurality of memory cells. Such circuitry may also include one or more reconfigurable sense amplifier devices coupled to the memory array and configured to amplify differential voltage levels received from the memory array. The reconfigurable sense amplifier devices may include a plurality of sense amplifier circuits configured to be arranged in one of a plurality of topology configurations, where the topology configurations include a parallel configuration and a cross parallel configuration. The reconfigurable sense amplifier devices may also include one or more switches configured to set the plurality of sense amplifier circuits into the plurality of topological configurations based on one or more control bits.

Integrated circuit using topology configurations

An electrostatic discharge clamp circuit is provided for low power applications. The clamp circuit includes: a detection circuit, a bias circuit and a shunting circuit having at least one shunt transistor. The detection circuit is configured to detect an occurrence of an electrostatic charge on a power supply node and trigger discharge of the electrostatic charge through the shunting circuit. The bias circuit is coupled between the detection circuit and the shunting circuit and applies a bias voltage to the gate terminal of the shunt transistor. During an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially equal to the supply voltage; whereas, during the absence of an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially half of the supply voltage.

Electrostatic discharge clamp circuit for ultra-low power applications

Growing community of inventors

Singapore, Singapore

Massimo Alioto