Stmicroelectronics S.r.l.

Massimiliano Innocenti

Claudio Mucci

Valentina Nardone

Roberto Antonio Canegallo

Luca Ciccarelli

Luca Perugini

Pankaj Rohilla

Matteo Pizzotti

Stefano Pucillo

A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the 'sea of gates' model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.

Memory base cell and memory bank

A circuit base cell is for implementing an engineering change order (ECO) obtained on a semiconductor substrate. The base cell may include a PMOS transistor having a first active region obtained in a first diffusion P+ layer implanted in an N-well provided for on the substrate, and an NMOS transistor having a second active region obtained in a second diffusion N+ layer implanted on the substrate in such a manner as to be electrically insulated from the first diffusion P+ layer. The cell may be characterized in that the active regions and the diffusion layers are aligned therebetween with respect to a reference axis and they are extended symmetrically in the direction orthogonal to the axis. A first and a second width may be associated with the active regions and to the diffusion layers, respectively. The first and second width may be greater than a width of the cell, which is equivalent to a pitch of the standard minimum cell.

Base cell for implementing an engineering change order (ECO)

A base cell for an Engineering Change Order (ECO) implementation having at least a first pair of CMOS transistors and a second pair of CMOS transistors, characterized in that said at least first pair of CMOS transistors have a common gate and said at least second pair of CMOS transistors have separate gates.

Base cell for engineering change order (ECO) implementation

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Urbino, Italy

Massimiliano Innocenti