Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Renesas Technology Corp.

Matsushita Electric Industrial Co., Ltd.

Acacia Research Group LLC

Masazumi Matsuura

Kinya Goto

Noriko Miura

Takeshi Furusawa

Noboru Morimoto

Atsuhiro Fujii

Naoki Yasuda

Teruhiko Kumada

Hideharu Nobutoki

Hiroshi Yuasa

Hideki Genjo

Hideo Kotani

Tetsuo Satake

Shigeo Nagao

Susumu Matsumoto

Hiroshi Horibe

Isao Tottori

Tsuyoshi Hamatani

Yoriko Ii

A semiconductor device with a through via penetrating a semiconductor substrate, in which shorting between a wiring and a semiconductor element is prevented to improve the reliability of the semiconductor device. A liner insulating film as a low-k film, which has a function to insulate the semiconductor substrate and a through-silicon via from each other and is thick enough to reduce capacitance between the semiconductor substrate and the through-silicon via, is used as an interlayer insulating film for a first wiring layer over a contact layer. This prevents a decrease in the thickness of an interlayer insulating film in the contact layer.

Semiconductor device and manufacturing method thereof

A semiconductor device including a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls forming a closed loop in a plan view, and where at least one of the seal rings includes a seal ring protrusion portion in inward protruding form in the vicinity of a chip corner.

Semiconductor chip with seal ring and sacrificial corner pattern

To provide a technique adopting a TSV technique, capable of improving manufacturing yield and reliability of semiconductor devices. By partitioning a connection pad-forming region into a plurality of regions and by forming, respectively, connection padshaving a relatively small planar area, spaced apart from an adjacent connection padin each of partitioned regions, dishing generated in the connection padis lightened. In addition, by not forming a through holefor forming a through electrodein an interlayer insulating filmcovering a semiconductor element, intrusion of HO, a metal ion such as Naor K, etc. into an element-forming region from the through hole, via the interlayer insulating film is prevented.

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan view, and where at least one of the seal rings includes a seal ring protrusion portion in inward protruding form in the vicinity of a chip corner.

There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Semiconductor device and method of fabricating the same

In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

Semiconductor device and manufacturing method therefor

Semiconductor device with seal ring

A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness direction

A semiconductor device includes: multiple kinds of interlayer insulating films formed on a semiconductor substrate and having different elastic moduli, respectively; a metal pad arranged on said multiple kinds of interlayer insulating films; the interlayer insulating film of a low elastic modulus having the lowest elastic modulus and having an opening located under the metal pad, the interlayer insulating film of a not-low elastic modulus having the elastic modulus larger than the elastic modulus of the interlayer insulating film of the low elastic modulus, being layered in contact with the interlayer insulating film of the low elastic modulus, and continuously extending over the opening and a region surrounding the opening and a metal interconnection layer arranged under the metal pad, filling the opening in the interlayer insulating film of the low elastic modulus, and being in contact with the interlayer insulating film of the not-low elastic modulus.

Semiconductor device which employs an interlayer insulating film of a low mechanical strength and a highly reliable metal pad, and a method of manufacturing the same

Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed therein

Growing community of inventors

Tokyo, Japan

Masazumi Matsuura