Texas Instruments Corporation

Hitachi, Ltd.

Lintec Corporation

Senju Metal Industry Co., Ltd.

Texas Instruments Japan Limited

Other

Masazumi Amagai

Norito Umehara

Masako Watanabe

Kazuyoshi Ebe

Yoshimi Takahashi

Kunihiro Tsubosaki

Hiroshi Okada

Ichiro Anjoh

Masahiro Ichitani

Minoru Ueshima

Yoshitaka Toyoda

Darvin R Edwards

Junichi Arita

Tsukasa Ohnishi

Chee Kiang Yew

Mamoru Kobayashi

Kensho Murata

Lim T Beng

Chai T Chong

Jeffrey Alan West

Takahiro Roppongi

Kenji Masumoto

Hideo Senoo

Margaret Simmons-Matthews

Osamu Munekata

Akira Karashima

Daisuke Souma

Kiyoshi Yajima

Takeshi Tashima

Norihito Umehara

A semiconductor device, which comprises a workpiece with an outline and a plurality of contact pads and further an external part with a plurality of terminal pads. This part is spaced from the workpiece and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element interconnects each of the contact pads with its respective terminal pad. Thermoplastic material fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline substantially in line with the outline of the workpiece, and fills the space substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.

Method for fabricating flip-attached and underfilled semiconductor devices

The objective of the invention is to provide a method of manufacturing a semiconductor device that allows individual molding of plural semiconductor chips carried on a surface of the substrate. It includes the following process steps: a process step in which plural semiconductor elementsare arranged on the surface of substrate; a process step in which the inner side of substrateis fixed on lower die; a process step in which liquid resinis supplied from nozzleonto each of the semiconductor elements in order to cover at least a portion of each of semiconductor chips; a process step in which the upper die having plural cavitiesformed in one surface is pressed onto the lower die, and liquid resinis molded at a prescribed temperature by means of plural cavities; and a process step in which cavitiesof upper dieare detached from the substrate, and plural molding resin portions are formed individually.

Semiconductor device having multiple semiconductor elements

A semiconductor device (), which comprises a workpiece () with an outline () and a plurality of contact pads () and further an external part () with a plurality of terminal pads (). This part is spaced from the workpiece, and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element () interconnects each of the contact pads with its respective terminal pad. Thermoplastic material () fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline () substantially in line with the outline of the workpiece, and fills the space () substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.

An integrated circuit (IC) includes a substrate having a top side having active circuitry thereon including a plurality of metal interconnect levels including a first metal interconnect level and a top metal interconnect level, and a bottom side. At least one TSV array includes a plurality of TSVs. The TSVs are positioned in rows including a plurality of interior rows and a pair of exterior rows and a plurality of columns including a plurality of interior columns and a pair of exterior columns. At least a portion of the TSVs in the array are electrically connected TSVs that are coupled to a TSV terminating metal interconnect level selected from the plurality of metal interconnect levels. At least one of the exterior rows or exterior columns include a lower number of electrically connected TSVs compared to a maximum number of electrically connected TSVs in the interior rows and interior columns, respectively.

IC having TSV arrays with reduced TSV induced stress

Method of manufacturing a semiconductor device

A semiconductor device with an improved solder joint system is described. The solder system includes two copper contact pads connected by a body of solder and the solder is an alloy including tin, silver, and at least one metal from the transition groups IIIA, IVA, VA, VIA, VIIA, and VIIIA of the Periodic Table of the Elements. The solder joint system also includes, between the pads and the solder, layers of intermetallic compounds, which include grains of copper and tin compounds and copper, silver, and tin compounds. The compounds contain the transition metals. The inclusion of the transition metals in the compound grains reduce the compound grains size and prevent grain size increases after the solder joint undergoes repeated solid/liquid/solid cycles.

Semiconductor device with an improved solder joint

In one aspect, the invention provides a semiconductor device that comprises a semiconductor device packaging substrate core. A first interconnect structure is located within a mold region and on a die side of the substrate core and has a first conductive metal density associated therewith. A second interconnect structure is located within the mold region and on a solder joint side of the substrate core and has a second conductive metal density associated therewith, wherein the second conductive metal density within the mold region is about equal to or less than the first conductive metal density within the mold region.

Semiconductive device having improved copper density for package-on-package applications

A lead-free solder includes 0.05-5 mass % of Ag, 0.01-0.5 mass % of Cu, at least one of P, Ge, Ga, Al, and Si in a total amount of 0.001-0.05 mass %, and a remainder of Sn. One or more of a transition element for improving resistance to heat cycles, a melting point lowering element such as Bi, In, or Zn, and an element for improving impact resistance such as Sb may be added.

Lead-free solder

A method for attaching an integrated circuit chip to an organic substrate comprising the steps of providing an integrated circuit chip having an active and a passive surface, said active surface including a protective polymer layer; activating said polymer layer by exposing it to reactive ion etching plasma, thereby increasing the surface roughness and imparting affinity to adhesion; providing an electrically insulating substrate having first and second surfaces; and contacting said second surface of said substrate to said activated polymer layer on said chip, whereby strong adhesion is exerted at the interface between said layer and said substrate, directly attaching said substrate to said chip.

Direct attachment of semiconductor chip to organic substrate

A lead-free solder alloy comprises 1.0&#x2013;5.0 wt % Ag, 0.01&#x2013;0.5 wt % Ni, one or both of (a) 0.001&#x2013;0.05 wt % Co and (b) at least one of P, Ge, and Ga in a total amount of 0.001&#x2013;0.05 wt %, and a remainder of Sn. The solder can form solder bumps which have a high bonding strength and which do not undergo yellowing after soldering.

Lead-free solder alloy

A semiconductor device comprising a semiconductor chip having an active and a passive surface, the passive surface adhesively attached to a substrate film by means of a multilayer composite; this composite comprising a metal foil having first and second surfaces and an adhesive layer attached on each of these surfaces. The multilayer composite has an average modulus larger than the modulus of the encapsulating molding compound used in the semiconductor device. By applying the composite to assembling face-up chip-scale devices, stress in solder joints is reduced and solder fatigue life enhanced.

Semiconductor package with metal foil attachment film

Growing community of inventors

Tsukuba, Japan

Masazumi Amagai