Hitachi-kokusai Electric Inc.

Other

Kokusai Electric Co., Ltd.

Masayuki Tsuneda

Hideharu Itatani

Taketoshi Sato

Atsushi Sano

Masanori Sakai

Yasuhiro Inokuchi

Sadayoshi Horii

Masayuki Asai

Tsukasa Ohoka

Satoru Tagami

Naoko Matsuyama

Kanako Kitayama

Tadanori Yoshida

Ryoichi Furukawa

Michihide Nakamure

Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.

Semiconductor device manufacturing method and substrate processing apparatus

Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.

It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate ( ), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate ( ), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate ( ) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate ( ), and thereafter, the RPO process is performed ( ). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a plurality of times.

Manufacturing method of semiconductor device and substrate processing apparatus

A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta O film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480&deg; C. or lower, using a gas obtained by vaporizing Ta(OC H ) as a tantalum source gas.

Manufacturing method for semiconductor device

A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber ( ) with care or elaboration. A ruthenium raw gas feed pipe ( ) and an oxygen-containing gas feed pipe ( ) are merged with each other at a location upstream of a gas mixing chamber ( ), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O ), ozone (O ), etc.) are mixed with each other prior to entering the gas mixing chamber ( ).

Method of manufacturing a semiconductor

When films of Ru(C H C H ) are formed on a substrate by means of a thermal CVD method, the films are also deposited on members around the substrate, resulting in the formation of particles on the substrate and hence a reduction in the manufacturing yield. Thus, it is necessary to clean the interior of the reaction chamber, but in a conventional cleaning process, a cleaning time is long and hence manufacturing efficiency is low, increasing manufacturing costs. To improve these, a method of manufacturing semiconductor devices according to the present invention includes: a deposition process for forming a film containing Ru on a substrate in a reaction chamber; and a cleaning process for supplying a ClF gas to the reaction chamber so as to remove films, which were deposited on an inner surface of the reaction chamber in the deposition process, through thermochemical reactions.

Method of manufacturing semiconductor devices

A semiconductor manufacturing method and apparatus having an excellent step coverage and capable of manufacturing semiconductor devices at low cost. The apparatus includes a reaction chamber adapted to accommodate a substrate a gas feed port through which a raw material gas is supplied to the reaction chamber for forming ruthenium films or ruthenium oxide films on the substrate, and a gas exhaust port through which the raw material gas is exhausted from the reaction chamber. The raw material gas is directed from the gas feed port toward the substrate to initially form thereon a first ruthenium film or a first ruthenium oxide film by means of a thermal CVD method under first film-forming conditions, and subsquently to form a second ruthenium film or a second ruthenium oxide film on an underlayer of the first ruthenium film or the first ruthenium oxide film by means of the thermal CVD method under second film-forming conditions different from the first film-forming conditions, the second ruthenium film or the second ruthenium oxide film having a thickness greater than that of the first ruthenium film or the first ruthenium oxide film.

Method and apparatus for manufacturing semiconductor devices

A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (,) which has gas feed ports (,) and gas exhaust ports (,). The substrate in the reaction tube (,) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (,) through the gas feed ports (,) and exhausting the prescribed gas from the reaction tube (,) through all the exhaust ports (,). A film-forming gas is supplied to the reaction tube (,) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (,). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (,) from the gas feed ports (,) while being exhausted from the reaction tube (,) through all the exhaust ports (,), thereby removing a residual gas in the reaction tube.

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Tokyo, Japan

Masayuki Tsuneda