Canon Kabushiki Kaisha

Masayuki Tsuchiya

Shuji Tobashi

Masahiro Kobayashi

Satoshi Kato

Takehiko Soda

Yasuharu Ota

Kouhei Hashimoto

Yasushi Nakata

A photoelectric conversion device includes a photodiode configured to perform avalanche multiplication, a recharging circuit configured to perform a recharging operation to bring the photodiode after the avalanche multiplication into a state in which the avalanche multiplication can be performed again based on a first control signal including pulses that periodically repeat transitions from a first level to a second level, and a counter configured to count the number of occurrences of the avalanche multiplication by being enabled based on a second control signal. Before the counter is enabled based on the second control signal, the first control signal transitions from the first level to the second level and transitions from the second level to the first level.

Photoelectric conversion device

A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.

Method of manufacturing semiconductor device

A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.

Solid-state image sensor and method of manufacturing the same

An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

Solid-state image sensor

A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.

Solid-state image sensor, method of manufacturing the same, and camera

In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 &#x3bc;m or less from an end, on a side of the floating diffusion region, of the gate electrode.

Growing community of inventors

Ebina, Japan

Masayuki Tsuchiya